scholarly journals Numerical simulation of pulsed planar evaporation into background gas based on direct Monte Carlo simulation and solution of the BGK model kinetic equation

2021 ◽  
Vol 2119 (1) ◽  
pp. 012116
Author(s):  
A A Morozov ◽  
V A Titarev
Keyword(s):  
Monte Carlo ◽  
Kinetic Equation ◽  
Numerical Study ◽  
Direct Simulation Monte Carlo ◽  
Direct Monte Carlo Simulation ◽  
Nanosecond Laser ◽  
Model Kinetic Equation ◽  
Bgk Model ◽  
Density Peak ◽  
Background Gas

Abstract A numerical study of the planar gas expansion under pulsed evaporation into the background gas is carried out. The chosen conditions are typical for nanosecond laser deposition of thin films and nanostructure synthesis, with the saturated gas pressure at the surface of 5.4 MPa and the background pressure of 50 and 500 Pa. The problem is solved based on the direct simulation Monte Carlo method and direct numerical solution of the BGK model kinetic equation. A generally good agreement was obtained for all computed macroscopic quantities, with the exception of the higher density peak in the compressed layer and a wider shock front in the background gas for the BGK model.

1D and 2D Monte Carlo Simulations of Pulsed Laser Ablation of Si/Ga Into Ar/O2 with a Substrate

1995 ◽  
Vol 389 ◽  
Author(s):  
D. L. Capewell ◽  
D. G. Goodwin
Keyword(s):  
Monte Carlo ◽  
Room Temperature ◽  
Particle Flux ◽  
Film Growth ◽  
Pulsed Laser ◽  
Direct Simulation Monte Carlo ◽  
Dsmc Method ◽  
Simulation Monte Carlo ◽  
Cylindrical Volume ◽  
Background Gas

ABSTRACTThe Direct Simulation Monte Carlo (DSMC) method is applied to the problem of pulsed laser deposition in both ID and 2D axisymmetric simulations. A source of target atoms expands into a cylindrical volume containing a background gas at room temperature and pressures up to 100 mTorr in the presence of a diffusely reflecting substrate. At regular intervals, the density and temperature of each species are computed. Particle flux and energy per particle incident on the substrate are also monitored as functions of time. The simulation results qualitatively compare, well with experimental plume diagnostics, with measured film growth rates as a function of background gas pressure, and with measured changes in film growth stoichiometry resulting from the introduction of a background gas into a two-component PLD system.

scholarly journals Nonlinear Diffusion of Ions in a Gas. II. Diffusion in Finite Enclosures

1976 ◽  
Vol 29 (3) ◽  
pp. 171 ◽  
Author(s):  
RE Robson
Keyword(s):  
Kinetic Equation ◽  
Nonlinear Diffusion ◽  
Model Kinetic Equation ◽  
Bgk Model ◽  
And Diffusion

The connection between nonlinear diffusion and diffusion cooling of ions in a bounded gas is examined using the BGK model kinetic equation.

scholarly journals Transport Coefficients and Velocity Distribution Function of an Ion Swarm in an AC Electric Field Obtained from the BGK Kinetic Equation

1994 ◽  
Vol 47 (3) ◽  
pp. 305 ◽  
Author(s):  
RE Robson ◽  
T Makabe
Keyword(s):  
Distribution Function ◽  
Steady State ◽  
Kinetic Equation ◽  
Velocity Distribution ◽  
Transport Coefficients ◽  
Velocity Distribution Function ◽  
Model Kinetic Equation ◽  
Bgk Model ◽  
Ac Electric Field ◽  
Periodic Steady State

The transition to a periodic steady state for an ion swarm in a gas is investigated using the BGK model kinetic equation. Exact expressions for transport coefficients and the velocity distribution function are obtained and the latter is compared with experimental observations of ions in their parerit gases undergoing predominantly charge-transfer collisions.

The Effect of Gas-Surface Interactions on Laser-Generated BaTiO3 Plumes

1998 ◽  
Vol 526 ◽  
Author(s):  
Albert J. Paul ◽  
John W. Hastie ◽  
David W. Bonnell ◽  
Peter K. Schenck ◽  
Mark D. Vaudin
Keyword(s):  
Monte Carlo ◽  
Substrate Surface ◽  
Direct Simulation Monte Carlo ◽  
Compositional Analysis ◽  
Momentum Exchange ◽  
Model Predictions ◽  
Simulation Monte Carlo ◽  
Exchange Scattering ◽  
Background Gas ◽  
Gas Surface Interactions

AbstractTwo models, based on hydrodynamic and Direct Simulation Monte Carlo approaches, have been investigated for the simulation of species fluxes arriving at substrates during pulsed laser deposition of thin films. The models are assessed in light of the results of mass spectrometric and optical imaging observations of the plume. Model predictions of film composition are compared with the results of microscopic compositional analysis across a deposited BaTiO3 film. The spatial distributions of the relative abundance of total Ba and Ti were a particular focus of this study, with the latter model giving the best agreement with experiment. The Monte Carlo simulation results indicate that the incoming concentration ratio of total Ba to Ti, across the substrate surface, is strongly modified by gas collisions within a compressed region that forms between the infalling plume and the substrate surface, and also by momentum exchange (scattering) between the lighter plume species and the added background gas.

1D and 2D Monte Carlo Simulations of Pulsed Laser Ablation Of Si/Ga Into Ar/O2 With A Substrate

1995 ◽  
Vol 387 ◽  
Author(s):  
D. L. Capewell ◽  
D. G. Goodwin
Keyword(s):  
Monte Carlo ◽  
Room Temperature ◽  
Particle Flux ◽  
Film Growth ◽  
Pulsed Laser ◽  
Direct Simulation Monte Carlo ◽  
Dsmc Method ◽  
Simulation Monte Carlo ◽  
Cylindrical Volume ◽  
Background Gas

AbstractThe Direct Simulation Monte Carlo (DSMC) method is applied to the problem of pulsed laser deposition in both 1D and 2D axisymmetric simulations. A source of target atoms expands into a cylindrical volume containing a background gas at room temperature and pressures up to 100 mTorr in the presence of a diffusely reflecting substrate. At regular intervals, the density and temperature of each species are computed. Particle flux and energy per particle incident on the substrate are also monitored as functions of time. The simulation results qualitatively compare well with experimental plume diagnostics, with measured film growth rates as a function of background gas pressure, and with measured changes in film growth stoichiometry resulting from the introduction of a background gas into a two-component PLD system.

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