Dependence of laser power and gain on the cathode length of a sputtering copper ion laser

ABSTRACTPoly(p-phenylene vinylene) (PPV) films are usually photodegraded in air. We report on the enhancement of photoluminescence (PL) intensity of PPV films induced by Ar ion laser in the presence of air. The PL spectra were measured as function of laser power, time exposure and sample thickness. The initial PL intensity increases up to 300% without significant changes in peak positions by optimizing such parameters. This effect is accompanied by a blue-shift in the absorption spectrum resulting in shortened effective conjugation length and by a formation of defects such as carbonyl groups. Mechanisms for the observed photoluminescence intensity enhancements are suggested.

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High-Voltage Copper Ion Laser With A Helical Design Of The Electrodes

10.1117/12.942416 ◽

1985 ◽

Cited By ~ 1

Author(s):

M. Grozeva ◽

N. Sabotinov

Keyword(s):

High Voltage ◽

Copper Ion ◽

Ion Laser

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Radio-frequency-excited deep-UV copper ion laser

10.1117/12.361181 ◽

1999 ◽

Author(s):

Jianhua Yu ◽

Jianjun Huang ◽

Jingzhen Li

Keyword(s):

Radio Frequency ◽

Copper Ion ◽

Ion Laser ◽

Deep Uv

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Laser-Induced Dry Etching of GaAs with High Aspect Ratio

MRS Proceedings ◽

10.1557/proc-236-3 ◽

1991 ◽

Vol 236 ◽

Cited By ~ 1

Author(s):

Cheon Lee ◽

Hirokazu Sayama ◽

Susumu Namba ◽

Mikio Takai

Keyword(s):

Aspect Ratio ◽

Electron Spectroscopy ◽

Laser Power ◽

Chemical Compositions ◽

Reaction Products ◽

Scan Speed ◽

Ion Laser ◽

Etched Surface ◽

Argon Ion ◽

Scattering Measurement

AbstractLaser-induced thermochemical reactions have been investigated for GaAs in a CCl2F2 gas ambient using an argon-ion laser. The chemical compositions of the reaction products deposited on the etched groove were measured by Auger electron spectroscopy (AES). The conditions of laser power, scan speed, and CC12F2 gas pressure under which the etching reaction occurs without deposition of the residue were clarified. High etching rates up to 267 μm/s and an aspect ratio of 4.5 have been achieved by a single scan of a laser beam. Microprobe photoluminescence and Raman scattering measurement were carried out on the etched surface to characterize damage induced by this processing.

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High-voltage helical hollow cathode copper ion laser

Optics Communications ◽

10.1016/0030-4018(84)90129-9 ◽

1984 ◽

Vol 51 (6) ◽

pp. 417-419 ◽

Cited By ~ 10

Author(s):

M. Grozeva ◽

N. Sabotinov

Keyword(s):

High Voltage ◽

Hollow Cathode ◽

Copper Ion ◽

Cathode Copper ◽

Ion Laser

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Copper ion laser in He-CuBr, He-Cu, and Ne-CuBr pulse longitudinal discharge

10.1117/12.414051 ◽

2001 ◽

Cited By ~ 1

Author(s):

Nikolay K. Vuchkov ◽

Krasimir A. Temelkov ◽

Nikola V. Sabotinov ◽

Peter V. Zahariev ◽

Ivan K. Kostadinov

Keyword(s):

Copper Ion ◽

Ion Laser ◽

Longitudinal Discharge

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Simultaneous oscillation on UV and IR transitions of the copper ion laser

Applied Physics B Photophysics and Laser Chemistry ◽

10.1007/bf00325489 ◽

1991 ◽

Vol 52 (5) ◽

pp. 323-325 ◽

Cited By ~ 2

Author(s):

J. Yu ◽

H. J. Eichler ◽

K. Rittner ◽

T. M�ller-Wirts ◽

B. Wellegehausen

Keyword(s):

Copper Ion ◽

Ion Laser ◽

Simultaneous Oscillation

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Cw Argon Ion Laser Annealed B and as Implanted Diodes in Oxide Defined Silicon Devices

MRS Proceedings ◽

10.1557/proc-1-337 ◽

1980 ◽

Vol 1 ◽

Author(s):

T. O. Sedgwick ◽

P. M. Solomon ◽

H. J. Vollmer

Keyword(s):

Sheet Resistance ◽

Laser Power ◽

Reverse Bias ◽

Leakage Currents ◽

Silicon Devices ◽

Argon Ion Laser ◽

Ion Laser ◽

Argon Ion ◽

High Reverse Bias

ABSTRACTIn this paper, we present detailed reverse leakage data on laser annealed diodes which were formed by implanting 1 × 1013 and 1 × 1014 /cm2 B atoms at 20 keV and by implanting 1× 1014 and 1× 1015/cm2 As atoms at 50 keV into Si. The implant is made into bare Si through oxide windows where 1700Å thermal SiO2 is both the implant mask and the diode edge passivation. The thermal controls were annealed at 900°C for the B and 950°C for the As for 30 minutes. Diode reverse leakage curves versus voltage are reported for devices with variable perimeter to area ratios. The results indicate that B diodes can easily be made with characteristics similar to thermally annealed devices with leakage at 1V in the 10−9 A/cm2 range. For As implanted diodes, the results are mixed. For As implants of 1 × 1014 /cm2 the diodes had leakage currents at 3V in the high 10−9 A/cm2 range. At the 1 × 1015/cm 2 level devices with significantly higher leakage values at high reverse bias were obtained. The leakage and sheet resistance are determined in both cases and an optimum is shown as a function of laser power.

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Application of Laser Microetching in Formation of Air-Bearing Surface for Magnetic Head Sliders

MRS Proceedings ◽

10.1557/proc-397-317 ◽

1995 ◽

Vol 397 ◽

Cited By ~ 1

Author(s):

Y.F. LU ◽

K.D. YE

Keyword(s):

Laser Power ◽

Etching Rate ◽

Scanning Speed ◽

Air Bearing ◽

Magnetic Head ◽

Bearing Surface ◽

Ion Laser ◽

Side Walls ◽

Etching Parameters ◽

Laser Induced Etching

ABSTRACTLaser-induced etching of polycrystalline Al2O3TiC material by a tightly-focused CW Ar ion laser has been investigated in a KOH solution with different concentrations. It is found that the KOH concentration can strongly affect the etching quality where low KOH concentration can result in rough and irregular patterns. The etching effect is also related to laser power and scanning speed. Laser-induced etching of polycrystalline AI2O3TiC in a KOH solution is found to be a photothermal reaction in which a threshold laser power exists. With an appropriate set of etching parameters, well defined grooves can be obtained with clean side walls and with an etching rate up to several hundred micrometers per second. It is also found that the grains in the polycrystalline Al2O3TiC material play an important role in the etching dynamics and etching quality. This etching process is believed to be applicable to the formation of a slider surface of magnetic heads in the future.

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Two-Step Laser Recrystallization of Silicon Stripes in Sio2 Grooves for Crystallographic Orientation Control

MRS Proceedings ◽

10.1557/proc-35-669 ◽

1984 ◽

Vol 35 ◽

Cited By ~ 5

Author(s):

K. Egami ◽

M. Kimura ◽

T. Hamaguchi ◽

N. Endo

Keyword(s):

Crystallographic Orientation ◽

Laser Power ◽

Dwell Time ◽

Texture Formation ◽

Molten State ◽

Seed Formation ◽

Orientation Control ◽

Laser Recrystallization ◽

Ion Laser ◽

Lateral Epitaxy

ABSTRACTWe demonstrate a new two step laser recrystallization for crystallographic orientation control. In the cw Ar ion laser recrystallization of silicon stripes in the structure consisting of SiO2 grooves/polycrystalline Si sublayer/backing substrates, first, one edge of poly-Si stripes is intentionally recrystallized under relatively low laser power and a long dwell time in order to form a strong <100> texture with lamellar grains, second, poly-Si stripes are fully recrystallized using the above <100> texture as seed crystals by scanning a laser beam along the stripes. We discuss a strong <100> texture formation related to partially molten state in the first process of secondary seed formation, and use of a grooved structure with poly-Si sublayer suppressing edge nucleation during lateral epitaxy.

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