scholarly journals Exciton and Bi-exciton Binding Energy Calculation in a Core Shell Quantum Dot

2021 ◽  
Vol 1080 (1) ◽  
pp. 012012
Author(s):  
Shivani Rana ◽  
Sanjib Kabi ◽  
Kamakhya Prakash Misra ◽  
Saikat Chattopadhyay
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Exciton Binding Energy ◽  
Core Shell ◽  
Energy Calculation ◽  
Binding Energy Calculation

Photoionization cross section and binding energy of single dopant in hollow cylindrical core/shell quantum dot

2017 ◽  
Vol 121 (6) ◽  
pp. 064303 ◽  
Author(s):  
E. Feddi ◽  
M. El-Yadri ◽  
F. Dujardin ◽  
R. L. Restrepo ◽  
C. A. Duque
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Cross Section ◽  
Photoionization Cross Section ◽  
Core Shell

Binding energy and the third-order nonlinear optical susceptibility of an exciton in GaAs/AlGaAs core/shell spherical quantum dot

2018 ◽  
Vol 47 (4) ◽  
pp. 445-455 ◽  
Author(s):  
Zhi-Hai Zhang ◽  
Jun Sheng Li ◽  
Jian Tang ◽  
Liang Liang Yang ◽  
Kang-Xian Guo ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Nonlinear Optical ◽  
Core Shell ◽  
Third Order ◽  
Nonlinear Optical Susceptibility ◽  
The Third ◽  
Spherical Quantum Dot ◽  
Optical Susceptibility

DONOR BOUND EXCITONS CONFINED IN WURTZITE InGaN/GaN QUANTUM DOT NANOWIRE HETEROSTRUCTURES

2013 ◽  
Vol 27 (32) ◽  
pp. 1350186 ◽  
Author(s):  
MIN ZHANG ◽  
JUN-JIE SHI
Keyword(s):  
Binding Energy ◽  
Quantum Dot ◽  
Oscillator Strength ◽  
Structural Parameters ◽  
Three Dimensional ◽  
Exciton Binding Energy ◽  
Optical Transitions ◽  
Mass Approximation ◽  
Nanowire Heterostructures ◽  
The Right

Within the framework of the effective-mass approximation, the donor bound exciton states and interband optical transitions in InGaN / GaN strained quantum dot (QD) nanowire heterostructures (NWHETs) are investigated using a variational method, in which the built-in electric field (BEF) effect due to the spontaneous and piezoelectric polarizations and the three-dimensional (3D) confinement of the electron and hole in the QD are considered. Our results show that the position of the ionized donor, the strong BEF, the In-composition and the QD structural parameters have a significant influence on the donor bound exciton binding energy, the electron interband optical transitions and the exciton oscillator strength. The donor bound exciton binding energy increases obviously if the donor position changes from the left-interface to the right-interface. The BEF reduces the bound exciton binding energy and the exciton oscillator strength. The donor bound exciton binding energy increases, if the In-fraction increases. The emission wavelength monotonically increases if the QD height and radius increase.

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