Effect of gas pressure on ion energy at substrate side of Ag target radio-frequency and very-high-frequency magnetron sputtering discharge

2021 ◽  
Author(s):  
Weichen Ni ◽  
Chao Ye ◽  
Yiqing Yu ◽  
Xiangying Wang
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
High Frequency ◽  
Excitation Frequency ◽  
Gas Pressure ◽  
Very High Frequency ◽  
Magnetron Discharge ◽  
Ion Energy ◽  
Substrate Side ◽  
Very High

Abstract The effect of gas pressure on ion energy distribution at the substrate side of Ag target radio-frequency (RF) and very-high-frequency (VHF) magnetron sputtering discharge was investigated. At the lower pressure, the evolution of maximum ion energy (E) with the discharge voltage (V) varied with the excitation frequency, due to the joint contribution of the ion generation in the bulk plasma and the ion movement across the sheath related to the ion transit sheath time τi and RF period RF. At the higher pressure, the evolution of E-V relationships do not vary with the excitation frequency, due to the balance between the energy lost through collisions and the energy gained by acceleration in the electric field. Therefore, for the RF and VHF magnetron discharge, the lower gas pressure can have a clear influence on the E-V relationship.

Large Grain Size and High Deposition Rate for Microcrystalline Silicon Prepared by VHF-GD

1994 ◽  
Vol 358 ◽  
Author(s):  
P. Hapke ◽  
F. Finger ◽  
M. Luysberg ◽  
R. Carius ◽  
H. Wagner
Keyword(s):  
Grain Size ◽  
Deposition Rate ◽  
High Frequency ◽  
Excitation Frequency ◽  
Chemical Vapour ◽  
High Deposition Rate ◽  
Very High Frequency ◽  
Deposition Parameters ◽  
Plasma Excitation ◽  
Very High

ABSTRACTThe growth mechanism and material properties of -type µc-Si:H prepared with plasma enhanced chemical vapour deposition in the very high frequency range is investigated. By increasing the plasma excitation frequency the grain size, deposition rate and Hall mobility can be simultaneously increased without having to adjust other deposition parameters in particular the temperature. This effect is explained by an enhanced selective etching of amorphous tissue and grain boundary regions together with a sufficient supply of growth species at high frequency plasmas.

Initial growth and microstructure feature of Ag films prepared by very-high-frequency magnetron sputtering

2017 ◽  
Vol 26 (9) ◽  
pp. 095206
Author(s):  
Yue Zhang ◽  
Chao Ye ◽  
Xiang-Ying Wang ◽  
Pei-Fang Yang ◽  
Jia-Min Guo ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Frequency ◽  
Initial Growth ◽  
Very High Frequency ◽  
Very High

Versatile High Rate Plasma Deposition and Processing with very high Frequency Excitation

1997 ◽  
Vol 467 ◽  
Author(s):  
M. Heintze
Keyword(s):  
Growth Rates ◽  
High Frequency ◽  
Plasma Deposition ◽  
Excitation Frequency ◽  
High Growth ◽  
Surface Reactivity ◽  
High Rate ◽  
Plasma Diagnostic ◽  
Very High Frequency ◽  
Very High

ABSTRACTThe interest in plasma deposition using very high frequency (VHF) excitation arose after the preparation of a-Si:H at high growth rates was demonstrated. Subsequently the improved process flexibility and the control of material properties offered by the variation of the plasma excitation frequency was recognized. The preparation of amorphous and microcrystalline thin films in a VHF-plasma is described. The increased growth rates have been attributed to an enhancement of film precursor formation at VHF, to the decreased sheath thickness as well as to an enhancement of the surface reactivity by positive ions. Plasma diagnostic investigations show that the parameters mainly affected by the excitation frequency are the ion flux to the electrodes as well as the sheaths potentials and widths, rather than the plasma density.

Plasma Impedance Characteristics of Radio Frequency and Very High-Frequency Magnetron Discharges

2020 ◽  
Vol 48 (1) ◽  
pp. 99-103
Author(s):  
Xiyue Liu ◽  
Chao Ye ◽  
Xiangying Wang ◽  
Su Zhang ◽  
Min Zhu ◽  
...  
Keyword(s):  
Radio Frequency ◽  
High Frequency ◽  
Very High Frequency ◽  
Impedance Characteristics ◽  
Plasma Impedance ◽  
Very High

Plasma property of inductively coupled discharge and substrate bias co-assisted very-high-frequency magnetron sputtering

2015 ◽  
Vol 579 ◽  
pp. 1-8 ◽  
Author(s):  
Yi Liu ◽  
Chao Ye ◽  
Haijie He ◽  
Xiangying Wang ◽  
Shuibing Ge ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
High Frequency ◽  
Substrate Bias ◽  
Very High Frequency ◽  
Plasma Property ◽  
Inductively Coupled ◽  
Very High
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