scholarly journals Perspectives on testing fundamental physics with highly charged ions in Penning traps

2020 ◽  
Vol 6 (1) ◽  
pp. 014002
Author(s):  
K Blaum ◽  
S Eliseev ◽  
S Sturm
Keyword(s):  
Highly Charged Ions ◽  
Penning Traps ◽  
Fundamental Physics ◽  
Charged Ions

scholarly journals Highly charged ions: Optical clocks and applications in fundamental physics

2018 ◽  
Vol 90 (4) ◽  
Author(s):  
M. G. Kozlov ◽  
M. S. Safronova ◽  
J. R. Crespo López-Urrutia ◽  
P. O. Schmidt
Keyword(s):  
Highly Charged Ions ◽  
Fundamental Physics ◽  
Charged Ions

scholarly journals Highly charged ions in Penning traps: A new tool for resolving low-lying isomeric states

2012 ◽  
Vol 85 (4) ◽  
Author(s):  
A. T. Gallant ◽  
M. Brodeur ◽  
T. Brunner ◽  
U. Chowdhury ◽  
S. Ettenauer ◽  
...  
Keyword(s):  
Highly Charged Ions ◽  
Penning Traps ◽  
Charged Ions ◽  
Isomeric States

scholarly journals Penning traps with unitary architecture for storage of highly charged ions

2012 ◽  
Vol 83 (2) ◽  
pp. 023103 ◽  
Author(s):  
Joseph N. Tan ◽  
Samuel M. Brewer ◽  
Nicholas D. Guise
Keyword(s):  
Highly Charged Ions ◽  
Penning Traps ◽  
Charged Ions

scholarly journals Effect of Voltage Pulse Width and Synchronized Substrate Bias in High-Power Impulse Magnetron Sputtering of Zirconium Films

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 7
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Jing-Tang Chang ◽  
Yu-Tse Lin
Keyword(s):  
Growth Rate ◽  
Magnetron Sputtering ◽  
High Power ◽  
Pulse Width ◽  
Film Growth ◽  
Highly Charged Ions ◽  
Argon Pressure ◽  
Hexagonal Prism ◽  
Film Growth Rate ◽  
Charged Ions

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impulse magnetron sputtering (HiPIMS) process, on the obtained microstructure of films is investigated in this research. The films deposited at different argon pressure and substrate biasing are compared. With keeping the same average HiPIMS power and duty cycle, the film growth rate of the Zr film decreases with increasing argon pressure and enhancing substrate biasing. In addition, the film growth rate decreases with the elongating HiPIMS pulse width. For the deposition at 1.2 Pa argon, extending the pulse width not only intensifies the ion flux toward the substrate but also increases the fraction of highly charged ions, which alter the microstructure of films from individual hexagonal prism columns into a tightly connected irregular column. Increasing film density leads to higher hardness. Sufficient synchronized negative substrate biasing and longer pulse width, which supports higher mobility of adatoms, causes the preferred orientation of hexagonal α-phase Zr films from (0 0 0 2) to (1 0 1¯ 1). Unlike the deposition at 1.2 Pa, highly charged ions are also found during the short HiPIMS pulse width at 0.8 Pa argon.

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