Photo-induced defects in MAPbBr3 single crystals

AbstractThe effect of a fast neutron flux (Φ = 10^14–10^15 cm^–2) on the electrical and photoluminescence properties of p -CdZnTe single crystals is studied. Isothermal annealing is performed ( T = 400–500 K), and the activation energy of the dissociation of radiation-induced defects is determined at E _D ≈ 0.75 eV.

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Radiation-induced defects in gadolinium gallium garnet (GGG) single crystals

10.1117/12.224960 ◽

1995 ◽

Cited By ~ 1

Author(s):

Andrej O. Matkovskii ◽

D. Y. Sugack ◽

Sergii B. Ubizskii ◽

I. V. Kityk ◽

Marian Kuzma

Keyword(s):

Single Crystals ◽

Gadolinium Gallium Garnet ◽

Radiation Induced ◽

Induced Defects

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Electrical Characterization of N+-implanted n-type ZnO Single Crystals: p-n Homojunction and Deep Level Defects

MRS Proceedings ◽

10.1557/proc-1035-l10-08 ◽

2007 ◽

Vol 1035 ◽

Author(s):

Qilin Gu ◽

Xuemin Dai ◽

Chi-Chung Ling ◽

Shijie Xu ◽

Liwu Lu ◽

...

Keyword(s):

Single Crystals ◽

Thermal Evolution ◽

Deep Level ◽

Schottky Diodes ◽

Control Sample ◽

Electrical Characterization ◽

Type Layer ◽

Current Voltage ◽

Transient Spectroscopy ◽

Induced Defects

AbstractUnintentionally doped n-type ZnO single crystals were implanted by nitrogen ions with different fluences of 1013, 1014 and 1015 cm−2 respectively. ZnO p-n homojunction was successfully fabricated due to the formation of p-type layer after 650°C post-implantation annealing in air for 30 minutes. Further thermal evolution of deep level defects was studied through thermal annealing up to 1200°C. Electrical characterization techniques including current-voltage (I-V), capacitance-voltage (C-V), Deep Level Transient Spectroscopy (DLTS) and double-correlation DLTS (DDLTS) were used for investigating the control sample, all the as-implanted and annealed samples through Au/n-ZnO Schottky diodes as well as ZnO p-n junctions. Detailed electrical properties of fabricated devices and characteristics of implantation induced defects were analyzed based on plentiful DLTS spectra. Moreover, low-temperature photoluminescence experiments of all the as-implanted and annealed samples were performed and the correlation between results from electrical and optical characterizations was discussed.

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Gold Implanted Calcium Fluoride Single Crystals: Optical Properties of Ion Induced Defects and Metal Nanocrystals

Materials Science Forum ◽

10.4028/www.scientific.net/msf.239-241.695 ◽

1997 ◽

Vol 239-241 ◽

pp. 695-698 ◽

Cited By ~ 2

Author(s):

Don O. Henderson ◽

Y.S. Tung ◽

R. Mu ◽

A. Ueda ◽

Jin Ming Chen ◽

...

Keyword(s):

Optical Properties ◽

Single Crystals ◽

Calcium Fluoride ◽

Metal Nanocrystals ◽

Induced Defects

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Features of Radiation-Defect Annealing in n-Ge Single Crystals Irradiated with High-Energy Electrons

Ukrainian Journal of Physics ◽

10.15407/ujpe64.2.151 ◽

2019 ◽

Vol 64 (2) ◽

pp. 151

Author(s):

S. V. Luniov ◽

A. I. Zimych ◽

M. V. Khvyshchun ◽

V. T. Maslyuk ◽

I. G. Megela

Keyword(s):

Single Crystals ◽

High Energy ◽

Measured Temperature ◽

Hall Constant ◽

Defect Annealing ◽

Before And After ◽

Temperature Dependences ◽

Radiation Induced ◽

Disordered Crystal ◽

Induced Defects

The isothermal annealing of n-Ge single crystals irradiated with 10-MeV electrons to the fluence Φ = 5 × 1015 cm−2 has been studied. On the basis of the measured temperature dependences of the Hall constant and by solving the electroneutrality equations, the concentrations of radiation-induced defects (A-centers) in irradiated n-Ge single crystals are calculated both before and after the annealing. An anomalous increase of the Hall constant is found, when the irradiated n-Ge single crystals were annealed at Tan = 403 K for up to 3 h. The annealing at the temperature Tan = 393 K for 1 h gave rise to the np conversion in the researched crystals. The revealed effects can be explained by the concentration growth of A-centers owing to the generation of vacancies at the annealing of disordered crystal regions.

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