Si-Waveguide with Ferro-Electric Liquid Crystal Cladding for Use in Optical Switching Devices

2007 ◽  
Vol E90-C (5) ◽  
pp. 1055-1060 ◽  
Author(s):  
K. NAKATSUHARA ◽  
T. SASAKI ◽  
H. SATO ◽  
T. NAKAGAMI
Keyword(s):  
Liquid Crystal ◽  
Optical Switching ◽  
Optical Switching Devices ◽  
Switching Devices

Ferroelectric liquid crystal driving method for optical switching devices in communication networks

1993 ◽  
Vol 149 (1) ◽  
pp. 159-169 ◽  
Author(s):  
Shigeto Kohda ◽  
Seiiti Shirai ◽  
Yoshie Takeuchi ◽  
Noriyoshi Yamauchi
Keyword(s):  
Liquid Crystal ◽  
Communication Networks ◽  
Optical Switching ◽  
Ferroelectric Liquid Crystal ◽  
Optical Switching Devices ◽  
Switching Devices

Application of photosensitive polyimides as alignment layer to optical switching devices of a nematic liquid crystal

2001 ◽  
Vol 28 (2) ◽  
pp. 271-277 ◽  
Author(s):  
Gi Heon Kim ◽  
Shintaro Enomoto ◽  
Akihiko Kanazawa ◽  
Takeshi Shiono ◽  
Tomiki Ikeda ◽  
...  
Keyword(s):  
Liquid Crystal ◽  
Nematic Liquid Crystal ◽  
Optical Switching ◽  
Alignment Layer ◽  
Optical Switching Devices ◽  
Switching Devices

Electrical Characterization of E7 Liquid Crystal Molecules under the Impact of an External Electric Field (THz): A Theoretical approach

2020 ◽  
Vol 15 (2) ◽  
pp. 95-101
Keyword(s):  
Liquid Crystal ◽  
Electric Field ◽  
Order Parameter ◽  
Optical Switching ◽  
Rapid Change ◽  
Electrical Characterization ◽  
Optical Switching Devices ◽  
The Impact ◽  
Orientation Of Molecules

In this work, different parameters of E7 liquid crystal (LC) have been calculated under the influence of an electric field in THz frequency. The E7 LC parameters have positive as well as negative values of order parameter and birefringence under the influence for an electric field. The director angle of E7 LC shows fast fluctuations above the angle θ=45° and due to rapid change in the orientation of molecules, fast electro-optical switching devices based on E7 LC can be designed. The refractive index of the E7 LC maintains stability in THz frequency.

Tungsten-doped Ge2Sb2Te5 phase change material for high-speed optical switching devices

2020 ◽  
Vol 116 (13) ◽  
pp. 131901
Author(s):  
Pengfei Guo ◽  
Joshua A. Burrow ◽  
Gary A. Sevison ◽  
Heungdong Kwon ◽  
Christopher Perez ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Material ◽  
High Speed ◽  
Optical Switching ◽  
Optical Switching Devices ◽  
Change Material ◽  
Switching Devices
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