Rbs and Pixe Analysis Of Hg1-xCdxTe grown by MOCVD.

1990 ◽  
Vol 216 ◽  
Author(s):  
S.P. Russo ◽  
R.G. Elliman ◽  
P.N. Johnston ◽  
G.N. Pain
Keyword(s):  
Gas Flow ◽  
Vapour Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Pixe Analysis ◽  
Mocvd Reactor ◽  
Metal Organic ◽  
Thickness Variations

ABSTRACTThe techniques, Particle Induced X-ray Emission (PIXE) and Rutherford Backscattering Spectrometry (RBS) have been used to investigate compositional and thickness uniformity of Hg1-xCdxTe (MCT) grown on GaAs substrates by Metal Organic Chemical Vapour Deposition (MOCVD). Composition and thickness variations are reported for orientations perpendicular and parallel to gas flow in the MOCVD reactor. Crystalline quality of the MCT layer was also determined by RBS channelling analysis.

Effet des paramètres de croissance sur les couches épitaxiales d'InP obtenues par MOCVD (metal-organic chemical vapor deposition) à basse pression

1991 ◽  
Vol 69 (3-4) ◽  
pp. 412-421 ◽  
Author(s):  
P. Cova ◽  
R. A. Masut ◽  
J. F. Currie ◽  
A. Bensaada ◽  
R. Leonelli ◽  
...  
Keyword(s):  
Reaction Kinetics ◽  
Vapor Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Epitaxial Layers ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The development of a low pressure, horizontal MOCVD (metal-organic chemical vapour deposition) reactor has allowed us to study the effect of phosphine and trimethylindium molar fluxes on the epitaxial growth of InP. Study of the growth rate in the temperature range 550–620 °C shows that the growth can be limited by the reaction kinetics at the surface. Epitaxial layers of good morphological quality have been obtained by reducing the rate of growth even if the growth is limited by the reaction kinetics at the surface. The variation of the electronic mobility with the PH3 molar flux reveals the existence of an optimum mobility region, even with a constant V: III ratio. Photoluminescence experiments carried out on the samples show the good crystallographic quality of the epitaxial layers. Spectra taken in the energy range 0.8–1.2 eV show the evolution of two structures at 0.91 and 1.08 eV that we associate with an antisite PIn and a VIn defect, respectively.[Journal translation]

scholarly journals High Conductivity of Mg-Doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN Superlattice Structure

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Zhiming Li ◽  
Jinping Li ◽  
Haiying Jiang ◽  
Yanbin Han ◽  
Yingjie Xia ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Doping Profile ◽  
Morphological Properties ◽  
Organic Chemical ◽  
Superlattice Structure ◽  
Metal Organic ◽  
P Type ◽  
Mg Doped

The highly conductance of Mg-doped Al0.3Ga0.7N layer using low-pressure metal organic chemical vapour deposition (MOCVD) on Al0.4Ga0.6N/AlN superlattice structure was reported. The rapid thermal annealing (RTA) has been employed for the effective activation and generation of holes, and a minimum p-type resistivity of 3 Ω·cm for p-type Al0.3Ga0.7N was achieved. The RTA annealing impacted on electrical, doping profile and morphological properties of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure have been also discussed. The quality of Mg-doped Al0.3Ga0.7N with Al0.4Ga0.6N/AlN superlattice structure degraded after annealing from HRXRD. At appropriate annealing temperature and time, surface morphology of Mg-doped Al0.3Ga0.7N can be improved. A step-like distribution of [Mg] and [H] in p-type Al0.3Ga0.7N was observed, and thermal diffusion direction of [Mg] and [H] was also discussed.

Research on the Properties of NiZnO Thin Films

2011 ◽  
Vol 130-134 ◽  
pp. 1491-1494
Author(s):  
Xin Dong ◽  
Jin Wang ◽  
Hui Wang ◽  
Zhi Feng Shi ◽  
Long Zhao
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Crystal Structure Analysis ◽  
Organic Chemical ◽  
Sapphire Substrates ◽  
Metal Organic

NiZnO thin films had been fabricated on c-plane sapphire substrates using photo-assisted metal organic chemical vapour deposition system. The crystal quality of the films had been improved greatly comparing to the results in earlier reports. The crystal structure analysis indicated the NiZnO kept the basic wurtzite structure until the content of Ni attained 0.18. The crystal and electrical properties of the films showed the content of Ni had an important effect on the properties of NiZnO films.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

Semiconductors

2018 ◽  
Author(s):  
L. Solymar ◽  
D. Walsh ◽  
R. R. A. Syms
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Vapour Deposition ◽  
Energy Levels ◽  
Chemical Vapour ◽  
Optical Excitation ◽  
Organic Chemical ◽  
Metal Organic ◽  
Mathematical Relations ◽  
Semiconductor Properties

Both intrinsic and extrinsic semiconductors are discussed in terms of their band structure. The acceptor and donor energy levels are introduced. Scattering is discussed, from which the conductivity of semiconductors is derived. Some mathematical relations between electron and hole densities are derived. The mobilities of III–V and II–VI compounds and their dependence on impurity concentrations are discussed. Band structures of real and idealized semiconductors are contrasted. Measurements of semiconductor properties are reviewed. Various possibilities for optical excitation of electrons are discussed. The technology of crystal growth and purification are reviewed, in particular, molecular beam epitaxy and metal-organic chemical vapour deposition.

Sign in / Sign up

Export Citation Format

Share Document