Review lecture: Metal–insulator transitions

1982 ◽  
Vol 382 (1782) ◽  
pp. 1-24 ◽  
Keyword(s):  
Magnetic Field ◽  
Gate Voltage ◽  
Disordered Systems ◽  
Mixed Valence ◽  
Impurity Band ◽  
Donor Concentration ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
First Order ◽  
Or Gate

A survey is given of a variety of solids that show a metal–insulator transition. In crystals most transitions are expected to be of first order as the composition or temperature is changed; in disordered systems this is not necessarily the case. The transition in an impurity band with change of donor concentration is described, and also with change of stress, magnetic field or gate voltage. The concept of a minimum metallic conductivity is discussed, with special reference to materials of mixed valence.

About the Metal-Insulator Transition in Quasicrystals

2000 ◽  
Vol 643 ◽  
Author(s):  
J. Delahaye ◽  
C. Berger ◽  
T. Grenet ◽  
G. Fourcaudot
Keyword(s):  
Magnetic Field ◽  
Fermi Level ◽  
Electronic Properties ◽  
Field Dependence ◽  
Density Of States ◽  
Disordered Systems ◽  
Magnetic Field Dependence ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Mi Transition

AbstractElectronic properties (conductivity and density of states) of quasicrystals present strong similarities with disordered semiconductor based systems on both sides of the Mott-Anderson metal-insulator (MI) transition. We revisit the conductivity of the i-AlCuFe and i-AlPdMn phases, which has temperature and magnetic field dependence characteristic of the metallic side of the transition. The i-AlPdRe ribbon samples can be on either side of the transition depending on their conductivity value. In all these i-phases, the density of states at the Fermi level EF is low. Its energy dependence close to EF is similar to disordered systems close to the MI transition where it is ascribed to effects of interactions between electrons and disorder.

scholarly journals Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/AlxGa1−xAs superlattice

1996 ◽  
Vol 53 (11) ◽  
pp. 6919-6922 ◽  
Author(s):  
W. Hilber ◽  
M. Helm ◽  
F. M. Peeters ◽  
K. Alavi ◽  
R. N. Pathak
Keyword(s):  
Magnetic Field ◽  
Impurity Band ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator

EFFECT OF DISORDER ON THE ELECTRICAL PROPERTIES OF AMORPHOUS CONDUCTING CARBON FILMS: OBSERVANCE OF FIELD INDUCED METAL-INSULATOR TRANSITION?

2000 ◽  
Vol 14 (02n03) ◽  
pp. 224-229 ◽  
Author(s):  
V. MEENAKSHI ◽  
S. V. SUBRAMANYAM
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
External Magnetic Field ◽  
Low Temperature ◽  
Carbon Films ◽  
Electronic Systems ◽  
Metal Insulator Transition ◽  
Preparation Temperature ◽  
Metal Insulator ◽  
Effect Of Disorder

In this work, the influence of disorder on the electrical properties (DC conductivity and Magnetoresistance) of amorphous conducting carbon films, prepared by the pyrolysis of Tetra chloro phthalic anhydride, is reported and discussed. The low temperature electrical properties are analyzed in terms of the various models developed for disordered electronic systems. The results indicate the possibility of a metal - insulator (M-I) transition, both as a function of preparation temperature and an external magnetic field.

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