Linear relation between x-ray absorption branching ratio and valence-band spin-orbit expectation value

1988 ◽  
Vol 38 (4) ◽  
pp. 1943-1947 ◽  
Author(s):  
B. T. Thole ◽  
G. van der Laan
1998 ◽  
Vol 62 (1) ◽  
pp. 65-75 ◽  
Author(s):  
P. F. Schofield ◽  
G. van der Laan ◽  
C. M. B. Henderson ◽  
G. Cressey

AbstractThe Fe 2p X-ray absorption spectra of single crystal gillespite, BaFeSi4O10, show a strong linear dichroism, i.e. a large difference in the absorption when measured with the polarization of the X-rays either parallel or perpendicular to the plane of the FeO4 group. The isotropic spectrum, obtained from measurement at the ‘magic angle’, and the polarization dependent spectra have been compared to atomic multiplet calculations and show an excellent agreement with theory. Analysis of the branching ratio, the linear dichroism, and the detailed peak structure confirms that the 5A1 level is the ground state at room temperature and pressure. The 5B2 level is sufficiently low in energy that a distortion of the electronic charge density, induced by increased pressure, may result in a 5B2 ground state.


1996 ◽  
Vol 449 ◽  
Author(s):  
Kevin E. Smith ◽  
Sarnjeet S Dhesi ◽  
Laurent-C. Duda ◽  
Cristian B Stagarescu ◽  
J. H. Guo ◽  
...  

ABSTRACTThe electronic structure of thin film wurtzite GaN has been studied using a combination of angle resolved photoemission, soft x-ray absorption and soft x-ray emission spectroscopies. We have measured the bulk valence and conduction band partial density of states by recording Ga L- and N K- x-ray emission and absorption spectra. We compare the x-ray spectra to a recent ab initio calculation and find good overall agreement. The x-ray emission spectra reveal that the top of the valence band is dominated by N 2p states, while the x-ray absorption spectra show the bottom of the conduction band as a mixture of Ga 4s and N 2p states, again in good agreement with theory. However, due to strong dipole selection rules we can also identify weak hybridization between Ga 4s- and N 2p-states in the valence band. Furthermore, a component to the N K-emission appears at approximately 19.5 eV below the valence band maximum and can be identified as due to hybridization between N 2p and Ga 3d states. We report preliminary results of a study of the full dispersion of the bulk valence band states along high symmetry directions of the bulk Brillouin zone as measured using angle resolved photoemission. Finally, we tentatively identify a non-dispersive state at the top of the valence band in parts of the Brillouin zone as a surface state.


1988 ◽  
Vol 38 (5) ◽  
pp. 3158-3171 ◽  
Author(s):  
B. T. Thole ◽  
G. van der Laan

2010 ◽  
Vol 97 (12) ◽  
pp. 124101 ◽  
Author(s):  
Selma Erat ◽  
Hiroki Wadati ◽  
Funda Aksoy ◽  
Zhi Liu ◽  
Thomas Graule ◽  
...  

2016 ◽  
Vol 18 (9) ◽  
pp. 093019 ◽  
Author(s):  
Jie Cheng ◽  
Xuanyong Sun ◽  
Shengli Liu ◽  
Bin Li ◽  
Haiyun Wang ◽  
...  

2015 ◽  
Vol 29 (03) ◽  
pp. 1550006 ◽  
Author(s):  
Hong-Guang Zhang ◽  
Yong-Tao Li ◽  
Liang Xie ◽  
Xue-Guang Dong ◽  
Qi Li

The local atomic and electronic structure of La 0.5 Sr 0.5 MnO 3 was investigated at different annealing temperatures (TA) by X-ray absorption spectroscopy (XAS) and photoemission spectroscopy (XPS). The extended X-ray absorption fine structure indicates that the MnO 6 octahedral distortion is reduced by increasing TA. The chemical shift for the sample with TA = 1350° C measured by XPS of Mn 2p core level demonstrates the increasing of Mn 3+ ions content. From the deconvolution of valence band photoemission spectra, the number of eg electron is also proved to increase with increasing TA. It is also demonstrated that there is a strongest hybridization between O 2p and surrounding atomic orbital states in sample with TA = 1350° C , which is consistent with valence band photoemission.


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