Collapse of vibrational structure in spectra of resonant x-ray Raman scattering

1997 ◽  
Vol 56 (1) ◽  
pp. 256-264 ◽  
Author(s):  
Faris Gel’mukhanov ◽  
Timofei Privalov ◽  
Hans Ågren
CrystEngComm ◽  
2011 ◽  
Vol 13 (1) ◽  
pp. 312-318 ◽  
Author(s):  
Navneet Soin ◽  
Susanta Sinha Roy ◽  
Christopher O'Kane ◽  
James A. D. McLaughlin ◽  
Teck H. Lim ◽  
...  

1997 ◽  
Vol 56 (22) ◽  
pp. R14267-R14270 ◽  
Author(s):  
T. Iwazumi ◽  
K. Kobayashi ◽  
S. Kishimoto ◽  
T. Nakamura ◽  
S. Nanao ◽  
...  

1996 ◽  
Vol 54 (6) ◽  
pp. 5374-5377 ◽  
Author(s):  
E. E. Fill ◽  
S. J. van Enk ◽  
Jian Zhang ◽  
P. Lambropoulos

1996 ◽  
Vol 52 (a1) ◽  
pp. C535-C535
Author(s):  
E. Wolanin ◽  
Ph. Pruzan ◽  
M. Gauthier ◽  
J. C. Chervin ◽  
B. Canny ◽  
...  

1991 ◽  
Vol 220 ◽  
Author(s):  
R. C. Bowman ◽  
P. M. Adams ◽  
S. J. Chang ◽  
V. Arbet-Engels ◽  
K. L. Wang

ABSTRACTInterface mixing between the Ge and Si layers in symmetrically strained SimGem superlattices occurs during post growth thermal anneals. Interdiffusion coefficients were obtained from intensity changes in the low angle superlattice x-ray satellites on samples with nominal periodicities between 1.4nm and 5.6nm. A common activation energy of 3.0±0.1 eV was found. The bulk interdiffusion coefficients for SimGem were derived since measurements were made on samples with different layer thicknesses. Intermixing appears to occur by diffusion of Si atoms into the Ge layers via a vacancy mechanism. Raman scattering measurements support this process as well as the formation of Si1−xGex, alloy layers during the anneals.


2017 ◽  
Vol 24 (2) ◽  
pp. 521-530 ◽  
Author(s):  
S. Huotari ◽  
Ch. J. Sahle ◽  
Ch. Henriquet ◽  
A. Al-Zein ◽  
K. Martel ◽  
...  

An end-station for X-ray Raman scattering spectroscopy at beamline ID20 of the European Synchrotron Radiation Facility is described. This end-station is dedicated to the study of shallow core electronic excitations using non-resonant inelastic X-ray scattering. The spectrometer has 72 spherically bent analyzer crystals arranged in six modular groups of 12 analyzer crystals each for a combined maximum flexibility and large solid angle of detection. Each of the six analyzer modules houses one pixelated area detector allowing for X-ray Raman scattering based imaging and efficient separation of the desired signal from the sample and spurious scattering from the often used complicated sample environments. This new end-station provides an unprecedented instrument for X-ray Raman scattering, which is a spectroscopic tool of great interest for the study of low-energy X-ray absorption spectra in materials under in situ conditions, such as in operando batteries and fuel cells, in situ catalytic reactions, and extreme pressure and temperature conditions.


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