scholarly journals Gate-Voltage-Induced Switching of the Spin-Relaxation Rate in a Triple-Quantum-Well Structure

2020 ◽  
Vol 13 (6) ◽  
Author(s):  
Tomonori Iijima ◽  
Hiroshi Akera
1977 ◽  
Vol 55 (15) ◽  
pp. 1354-1355 ◽  
Author(s):  
Peter Beckmann ◽  
E. Elliott Burnell

We have measured the proton longitudinal spin relaxation rate in dilute gaseous silane (SiH4) between 10−2 and 1 amagats and are able to observe the influence of rotational Q branch centrifugal distortion transitions.


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