Absence of Oxygen-Vacancy-Related Deep Levels in the Amorphous Mixed Oxide
(Al2O3)1−x(SiO2)x
: First-Principles Exploration of Gate Oxides in
GaN
-Based Power Devices
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2019 ◽
Vol 383
(2-3)
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pp. 210-214
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2011 ◽
Vol 375
(5)
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pp. 934-938
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2003 ◽
Vol 27
(1-2)
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pp. 70-74
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2018 ◽
Vol 101
(7)
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pp. 3118-3129
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