Electroluminescence in Unipolar-Doped In0.53Ga0.47As/AlAs Resonant-Tunneling Diodes: A Competition between Interband Tunneling and Impact Ionization

2021 ◽  
Vol 16 (5) ◽  
Author(s):  
E.R. Brown ◽  
W.-D. Zhang ◽  
T.A. Growden ◽  
P. Fakhimi ◽  
P.R. Berger
2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Ignacio Ortega-Piwonka ◽  
Oreste Piro ◽  
José Figueiredo ◽  
Bruno Romeira ◽  
Julien Javaloyes

2021 ◽  
Vol 15 (1) ◽  
Author(s):  
E.R. Cardozo de Oliveira ◽  
A. Naranjo ◽  
A. Pfenning ◽  
V. Lopez-Richard ◽  
G.E. Marques ◽  
...  

2004 ◽  
Vol 1 (8) ◽  
pp. 2210-2227 ◽  
Author(s):  
M. Hermann ◽  
E. Monroy ◽  
A. Helman ◽  
B. Baur ◽  
M. Albrecht ◽  
...  

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