Electron and hole transport in disordered monolayer 
MoS2
: Atomic vacancy induced short-range and Coulomb disorder scattering

Mathematical relations are obtained giving the X-ray scattering for a crystal the unit cell of which contains one or two asymmetric molecules, each of which can adopt either of two centrosymmetrically-related orientations, giving pseudocentrosymmetry. It is shown that measurements of the integral breadth of maxima of the diffuse ‘disorder’ scattering can give the dimensions of the short-range order regions. The temperature variation of intensity of such diffuse scattering is different from that of thermal diffuse scattering.

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Hole Transport in Exfoliated Monolayer MoS2

ACS Nano ◽

10.1021/acsnano.7b08831 ◽

2018 ◽

Vol 12 (3) ◽

pp. 2669-2676 ◽

Cited By ~ 24

Author(s):

Evgeniy Ponomarev ◽

Árpád Pásztor ◽

Adrien Waelchli ◽

Alessandro Scarfato ◽

Nicolas Ubrig ◽

...

Keyword(s):

Hole Transport ◽

Monolayer Mos2

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Ensemble Monte Carlo Simulation of Hole Transport in SiGe Alloys

Journal of Integrated Circuits and Systems ◽

10.29292/jics.v16i1.156 ◽

2021 ◽

Vol 16 (1) ◽

pp. 1-5

Author(s):

Caroline Dos Santos Soares ◽

Gilson Inácio Wirth ◽

Alan Rossetto ◽

Dragica Vasileska

Keyword(s):

Monte Carlo ◽

Heavy Hole ◽

Transport Model ◽

Hole Transport ◽

Light Hole ◽

Band Model ◽

Ensemble Monte Carlo ◽

Ensemble Monte Carlo Simulation ◽

Alloy Disorder ◽

Disorder Scattering

This paper employs Ensemble Monte Carlo method to simulate transport of holes in SiGe alloys. A three-band model was employed to describe the valence band of these alloys. The nonparabolicity and the warping effect of the heavy-hole and light-hole bands were considered in their dispersion relation, while the split-off band was described as parabolic and spherical. We consider phonon and alloy disorder scattering in these calculations. The mobility of holes for a range of SiGe al-loys was calculated at 300K. The simulation mobility results agree with the experimental data, implying that the selected transport model for holes in SiGe alloys is adequate.

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Domain coarsening by grain boundary migration in ordered Ni4Mo

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100144279 ◽

1986 ◽

Vol 44 ◽

pp. 560-561

Author(s):

K. Vasudevan ◽

H. P. Kao ◽

C. R. Brooks ◽

E. E. Stansbury

Keyword(s):

Grain Boundary ◽

Grain Boundaries ◽

Short Range ◽

Boundary Migration ◽

Grain Boundary Migration ◽

Rapid Cooling ◽

Temperature Range ◽

Fee Structure ◽

Domain Coarsening ◽

Boundary Reaction

The Ni4Mo alloy has a short-range ordered fee structure (α) above 868°C, but transforms below this temperature to an ordered bet structure (β) by rearrangement of atoms on the fee lattice. The disordered α, retained by rapid cooling, can be ordered by appropriate aging below 868°C. Initially, very fine β domains in six different but crystallographically related variants form and grow in size on further aging. However, in the temperature range 600-775°C, a coarsening reaction begins at the former α grain boundaries and the alloy also coarsens by this mechanism. The purpose of this paper is to report on TEM observations showing the characteristics of this grain boundary reaction.

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Ordering in Ni4Mo by TEM and APFIM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010012597x ◽

1987 ◽

Vol 45 ◽

pp. 214-215

Author(s):

E.A. Kenik ◽

T.A. Zagula ◽

M.K. Miller ◽

J. Bentley

Keyword(s):

Electron Irradiation ◽

Low Temperatures ◽

Short Range ◽

Atom Probe ◽

Range Order ◽

Considerable Time ◽

Probe Field ◽

Disordered Phase ◽

Transmission Electron ◽

Diffraction Patterns

The state of long-range order (LRO) and short-range order (SRO) in Ni4Mo has been a topic of interest for a considerable time (see Brooks et al.). The SRO is often referred to as 1½0 order from the apparent position of the diffuse maxima in diffraction patterns, which differs from the positions of the LRO (D1a) structure. Various studies have shown that a fully disordered state cannot be retained by quenching, as the atomic arrangements responsible for the 1½0 maxima are present at temperatures above the critical ordering temperature for LRO. Over 20 studies have attempted to identify the atomic arrangements associated with this state of order. A variety of models have been proposed, but no consensus has been reached. It has also been shown that 1 MeV electron irradiation at low temperatures (∼100 K) can produce the disordered phase in Ni4Mo. Transmission electron microscopy (TEM), atom probe field ion microscopy (APFIM), and electron irradiation disordering have been applied in the current study to further the understanding of the ordering processes in Ni4Mo.

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