Ensemble Monte Carlo Simulation of Hole Transport in SiGe Alloys
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This paper employs Ensemble Monte Carlo method to simulate transport of holes in SiGe alloys. A three-band model was employed to describe the valence band of these alloys. The nonparabolicity and the warping effect of the heavy-hole and light-hole bands were considered in their dispersion relation, while the split-off band was described as parabolic and spherical. We consider phonon and alloy disorder scattering in these calculations. The mobility of holes for a range of SiGe al-loys was calculated at 300K. The simulation mobility results agree with the experimental data, implying that the selected transport model for holes in SiGe alloys is adequate.
1999 ◽
Vol 272
(1-4)
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pp. 419-421
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2005 ◽
Vol 122
(17)
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pp. 174907
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1997 ◽
Vol 107
(6)
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pp. 2012-2019
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