Multiple-photon transitions in electrically detected magnetic resonance measurements of 4H−SiC transistors

2020 ◽  
Vol 102 (2) ◽  
Author(s):  
James P. Ashton ◽  
Patrick M. Lenahan
2014 ◽  
Vol 778-780 ◽  
pp. 414-417 ◽  
Author(s):  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Ryo Arai ◽  
Yoshihiro Satoh ◽  
Ryouji Kosugi ◽  
...  

This paper reports an EDMR (electrically detected magnetic resonance) observation on 4H-SiC(000-1) “C face” MOSFETs. We found a new strong EDMR signal in wet-oxidized C-face 4H-SiC MOSFETs, which originates from intrinsic interface defects on C-face SiC-SiO2 structures.


1998 ◽  
Vol 58 (8) ◽  
pp. 4892-4902 ◽  
Author(s):  
T. Wimbauer ◽  
M. S. Brandt ◽  
M. W. Bayerl ◽  
N. M. Reinacher ◽  
M. Stutzmann ◽  
...  

2011 ◽  
Vol 3 (4) ◽  
pp. 568-574 ◽  
Author(s):  
M. Fanciulli ◽  
A. Vellei ◽  
C. Canevali ◽  
S. Baldovino ◽  
G. Pennelli ◽  
...  

ChemInform ◽  
2012 ◽  
Vol 43 (11) ◽  
pp. no-no
Author(s):  
P. M. Lenahan ◽  
C. J. Cochrane ◽  
J. P. Campbell ◽  
J. T. Ryan

1999 ◽  
Vol 101 (1-3) ◽  
pp. 805-806 ◽  
Author(s):  
C.F.O, Graeff ◽  
C.A. Brunello ◽  
R.M. Faria

1995 ◽  
Vol 395 ◽  
Author(s):  
W.E. Carlos ◽  
E.R. Glaser ◽  
T.A. Kennedy ◽  
S. Nakamura

ABSTRACTMagnetic resonance techniques are used to study the recombination processes in GaN-based light emitting diodes (LEDs). Electrically-detected magnetic resonance (EDMR) and electroluminescence-detected magnetic resonance (ELDMR) results on InGaN/AlGaN double heterostructures are presented for blue and green LEDs. In either technique our signals are dominated by a broad feature that we ascribe to a deep Zn-related acceptor. Our ELDMR measurements show that this is associated with the blue or green emission. Our EDMR measurements resolve a second center that is tentatively identified as a deep donor trap.


Sign in / Sign up

Export Citation Format

Share Document