Spin- and valley-polarized transport and magnetoresistance in asymmetric ferromagnetic WSe2 tunnel junctions

2021 ◽  
Vol 103 (24) ◽  
Author(s):  
Yaser Hajati ◽  
Mohammad Alipourzadeh ◽  
Imam Makhfudz
Keyword(s):  
Tunnel Junctions ◽  
Polarized Transport

A two-band model of spin-polarized transport in Fe/Cr/MgO/Fe magnetic tunnel junctions

2010 ◽  
Vol 107 (9) ◽  
pp. 09C720 ◽  
Author(s):  
A. Vedyaev ◽  
N. Ryzhanova ◽  
N. Strelkov ◽  
M. Chshiev ◽  
B. Dieny
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Band Model ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport ◽  
Two Band Model

Enhancing TMR and spin-filtration by using out-of-plane graphene insulating barrier in MTJs

2017 ◽  
Vol 19 (27) ◽  
pp. 17765-17772 ◽  
Author(s):  
Shweta Meena ◽  
Sudhanshu Choudhary
Keyword(s):  
Graphene Sheet ◽  
First Principles ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Half Metallic ◽  
Spin Polarized ◽  
Out Of Plane ◽  
Polarized Transport ◽  
Spin Polarized Transport

First principles investigations are performed to understand the spin-polarized transport in Magnetic Tunnel Junctions (MTJs) consisting of an out-of-plane graphene sheet as a barrier in between two CrO2 Half-Metallic-Ferromagnetic (HMF) electrodes.

Spin-polarized transport in hybrid (Zn,Cr)Te∕Al2O3∕Co magnetic tunnel junctions

2006 ◽  
Vol 88 (20) ◽  
pp. 202501 ◽  
Author(s):  
W. G. Wang ◽  
C. Ni ◽  
T. Moriyama ◽  
J. Wan ◽  
E. Nowak ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport

TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC SEMICONDUCTOR TUNNEL JUNCTIONS

2004 ◽  
Vol 18 (16) ◽  
pp. 2247-2256 ◽  
Author(s):  
Y. C. TAO ◽  
J. G. HU
Keyword(s):  
Tunnel Junctions ◽  
Hole Concentration ◽  
Great Influence ◽  
Tunneling Magnetoresistance ◽  
Ferromagnetic Semiconductors ◽  
Hamiltonian Approach ◽  
Spin Polarized ◽  
Basic Physics ◽  
Polarized Transport ◽  
Spin Polarized Transport

Taking into account the basic physics of diluted ferromagnetic semiconductors (DMS), we use the tunneling Hamiltonian approach to studying the spin-polarized transport in GaMnAs / AlAs / GaMnAs DMS tunnel junctions. It is found that the splitting, Fermi energies, and the hole concentration for a fixed Mn impurity density vary with temperature, which exert a great influence on the spin-polarized transport of the DMS. We have also shown that there exists a spin-flip tunneling process arising from the impurity Mn scattering in the barrier, and the variation of normalized conductance difference ΔG with temperature is consistent with that of experiment.

Sign in / Sign up

Export Citation Format

Share Document