TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC SEMICONDUCTOR TUNNEL JUNCTIONS

2004 ◽  
Vol 18 (16) ◽  
pp. 2247-2256 ◽  
Author(s):  
Y. C. TAO ◽  
J. G. HU
Keyword(s):  
Tunnel Junctions ◽  
Hole Concentration ◽  
Great Influence ◽  
Tunneling Magnetoresistance ◽  
Ferromagnetic Semiconductors ◽  
Hamiltonian Approach ◽  
Spin Polarized ◽  
Basic Physics ◽  
Polarized Transport ◽  
Spin Polarized Transport

Taking into account the basic physics of diluted ferromagnetic semiconductors (DMS), we use the tunneling Hamiltonian approach to studying the spin-polarized transport in GaMnAs / AlAs / GaMnAs DMS tunnel junctions. It is found that the splitting, Fermi energies, and the hole concentration for a fixed Mn impurity density vary with temperature, which exert a great influence on the spin-polarized transport of the DMS. We have also shown that there exists a spin-flip tunneling process arising from the impurity Mn scattering in the barrier, and the variation of normalized conductance difference ΔG with temperature is consistent with that of experiment.

scholarly journals Spin Polarized Transport in an AC-Driven Quantum Curved Nanowire

2011 ◽  
Vol 2011 ◽  
pp. 1-5 ◽  
Author(s):  
Walid A. Zein ◽  
Nabil A. Ibrahim ◽  
Adel H. Phillips
Keyword(s):  
Spin Polarization ◽  
Small Strain ◽  
Oscillatory Behavior ◽  
Tunneling Magnetoresistance ◽  
Mass Approximation ◽  
Wide Range ◽  
Spin Polarized ◽  
Polarized Transport ◽  
The One ◽  
Spin Polarized Transport

Using the effective-mass approximation method, and Floquet theory, we study the spin transport characteristics through a curved quantum nanowire. The spin polarization, P, and the tunneling magnetoresistance, TMR, are deduced under the effect of microwave and infrared radiations of wide range of frequencies. The results show an oscillatory behavior of both the spin polarization and the tunneling magnetoresistance. This is due to Fano-type resonance and the interplay between the strength of spin-orbit coupling and the photons in the subbands of the one-dimensional nanowire. The present results show that this investigation is very important, and the present device might be used to be a sensor for small strain in semiconductor nanostructures and photodetector.

A two-band model of spin-polarized transport in Fe/Cr/MgO/Fe magnetic tunnel junctions

2010 ◽  
Vol 107 (9) ◽  
pp. 09C720 ◽  
Author(s):  
A. Vedyaev ◽  
N. Ryzhanova ◽  
N. Strelkov ◽  
M. Chshiev ◽  
B. Dieny
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Band Model ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport ◽  
Two Band Model

Enhancing TMR and spin-filtration by using out-of-plane graphene insulating barrier in MTJs

2017 ◽  
Vol 19 (27) ◽  
pp. 17765-17772 ◽  
Author(s):  
Shweta Meena ◽  
Sudhanshu Choudhary
Keyword(s):  
Graphene Sheet ◽  
First Principles ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Half Metallic ◽  
Spin Polarized ◽  
Out Of Plane ◽  
Polarized Transport ◽  
Spin Polarized Transport

First principles investigations are performed to understand the spin-polarized transport in Magnetic Tunnel Junctions (MTJs) consisting of an out-of-plane graphene sheet as a barrier in between two CrO2 Half-Metallic-Ferromagnetic (HMF) electrodes.

Spin-polarized transport in hybrid (Zn,Cr)Te∕Al2O3∕Co magnetic tunnel junctions

2006 ◽  
Vol 88 (20) ◽  
pp. 202501 ◽  
Author(s):  
W. G. Wang ◽  
C. Ni ◽  
T. Moriyama ◽  
J. Wan ◽  
E. Nowak ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Polarized ◽  
Polarized Transport ◽  
Spin Polarized Transport
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