scholarly journals Anomalous diamagnetism of electride electrons in transition metal silicides

2021 ◽  
Vol 103 (24) ◽  
Author(s):  
M. Hiraishi ◽  
K. M. Kojima ◽  
H. Okabe ◽  
A. Koda ◽  
R. Kadono ◽  
...  
2006 ◽  
Vol 958 ◽  
Author(s):  
Takehide Miyazaki ◽  
Toshihiko Kanayama

ABSTRACTWe propose a novel form of graphene-like Si nanostructure based on ab initio total-energy calculation and geometry optimization, (MSi12)n, with M being transition metal atom. It has a three-layer structure, where the two layers of Si atoms in graphene-like positions sandwich another layer of transition metal atoms. The electronic structure may become semiconducting or metallic, depending on the choice of M and arrangement of Si atoms. This hypothetical material can be regarded as a Si-rich phase of transition metal silicide. A potential impact of our finding in forthcoming ultra-scaled Si technology is also discussed.


1983 ◽  
Vol 2 (1) ◽  
pp. 31-34 ◽  
Author(s):  
P.A. Heimann ◽  
S.P. Murarka ◽  
J. Rosario

2006 ◽  
Vol 980 ◽  
Author(s):  
Haruyuki Inui ◽  
Katsushi Tanaka ◽  
Kyosuke Kishida

AbstractThe microstructure, defect structure and thermoelectric properties of two different semiconducting transition-metal silicides, ReSi1.75 and Ru2Si3 upon alloying with a substitutional element with a valence electron number different from that of the constituent metal have been investigated in order to see if the crystal and defect structures of these silicides and thereby their physical properties can be controlled through defect engineering according to the valence electron counting rule. The Si vacancy concentration and its arrangement can be successfully controlled in ReSi1.75 while the relative magnitude of the metal and silicon subcell dimensions in the chimney-ladder structures can be successfully controlled in Ru2Si3. As a result, the improvement in the thermoelectric properties and the p- to n-type conduction transition are successfully achieved respectively for these semiconducting transition-metal silicides.


2007 ◽  
pp. 338-339
Author(s):  
R. Pretorius ◽  
J. J. Cruywagen

Materials ◽  
2017 ◽  
Vol 10 (6) ◽  
pp. 661 ◽  
Author(s):  
Thomas Mittermeier ◽  
Pankaj Madkikar ◽  
Xiaodong Wang ◽  
Hubert Gasteiger ◽  
Michele Piana

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