Electronic structure of nitrogen-vacancy doped SmN: Intermediate valence and 4f transport in a ferromagnetic semiconductor

2021 ◽  
Vol 104 (7) ◽  
Author(s):  
W. F. Holmes-Hewett
Keyword(s):  
Electronic Structure ◽  
Ferromagnetic Semiconductor ◽  
Nitrogen Vacancy ◽  
Intermediate Valence

scholarly journals Effect of Vacancy Defects on the Electronic Structure and Optical Properties of GaN

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Lili Cai ◽  
Cuiju Feng
Keyword(s):  
Optical Properties ◽  
Electronic Structure ◽  
Lower Energy ◽  
Density Functional ◽  
Nitrogen Vacancy ◽  
Main Peak ◽  
Generalized Gradient ◽  
Vacancy Defects ◽  
Gallium Vacancy ◽  
Defect Levels

The effect of gallium vacancy (VGa) and nitrogen vacancy (VN) defects on the electronic structure and optical properties of GaN using the generalized gradient approximation method within the density functional theory were investigated. The results show that the band gap increases in GaN with vacancy defects. Crystal parameters decrease in GaN with nitrogen vacancy (GaN:VN) and increase in GaN with gallium vacancy (GaN:VGa). The Ga vacancy introduces defect levels at the top of the valence band, and the defect levels are contributed by N2p electron states. In addition, the energy band shifts to lower energy in GaN:VNand moves to higher energy in GaN:VGa. The level splitting is observed in the N2p states of GaN:VNand Ga3d states of GaN:VGa. New peaks appear in lower energy region of imaginary dielectric function in GaN:VNand GaN:VGa. The main peak moves to higher energy slightly and the intensity decreases.

Plutonium chalcogenides: Intermediate valence and electronic structure

1991 ◽  
Vol 43 (13) ◽  
pp. 11136-11144 ◽  
Author(s):  
P. Wachter ◽  
F. Marabelli ◽  
B. Bucher
Keyword(s):  
Electronic Structure ◽  
Intermediate Valence

Electronic structure of the intermediate-valence compound EuNi2P2 studied by soft x-ray photoemission spectroscopy

2021 ◽  
Vol 104 (16) ◽  
Author(s):  
Ikuto Kawasaki ◽  
Masaaki Kobata ◽  
Shin-ichi Fujimori ◽  
Yukiharu Takeda ◽  
Hiroshi Yamagami ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Photoemission Spectroscopy ◽  
Intermediate Valence ◽  
X Ray

Electronic Structure of a Nitrogen Vacancy in Cubic Gallium Nitride

1998 ◽  
Vol 209 (1) ◽  
pp. 63-79 ◽  
Author(s):  
V.A. Gubanov ◽  
A.F. Wright ◽  
J.S. Nelson ◽  
C.Y. Fong ◽  
Z.W. Lu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Gallium Nitride ◽  
Nitrogen Vacancy

scholarly journals Atomic scale electronic structure of the ferromagnetic semiconductor Cr2Ge2Te6

2018 ◽  
Vol 63 (13) ◽  
pp. 825-830 ◽  
Author(s):  
Zhenqi Hao ◽  
Haiwei Li ◽  
Shunhong Zhang ◽  
Xintong Li ◽  
Gaoting Lin ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Ferromagnetic Semiconductor ◽  
Atomic Scale

A COMPREHENSIVE STUDY OF THE ELECTRONIC STRUCTURE OF BOROCARBIDES BY XPS TECHNIQUE

2003 ◽  
Vol 17 (03) ◽  
pp. 361-371 ◽  
Author(s):  
KAMLESH KUMARI ◽  
R. K. SINGHAL ◽  
K. B. GARG ◽  
M. HEINONEN ◽  
J. LEIRO ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Valence State ◽  
Spectroscopic Studies ◽  
Impurity Phase ◽  
Superconducting Transition ◽  
Intermediate Valence ◽  
Arc Melting ◽  
Two Samples ◽  
Melting Technique ◽  
Comprehensive Study

Polycrystalline samples of YNi 2 B 2 C and magnetic ErNi 2 B 2 C prepared by arc melting technique have been investigated. Resistivity and magnetization measurements yield superconducting transition temperatures for the two samples of ~ 15 K and ~ 11 K respectively. Core level spectroscopic studies on C (1s), B (1s), Ni (2p), Er (4d) and Y (3d) as well as valence band measurements were performed in order to investigate the electronic structure. The results are interpreted to deduce the valence of Y, Er and Ni. Ni is found to exist in 2+ and y in 3+ valence state. The Er spectra indicate that Er may either be in an intermediate valence state or some minor impurity phase.

scholarly journals Multiplet effects in the electronic structure of intermediate-valence compounds

2009 ◽  
Vol 79 (16) ◽  
Author(s):  
P. Thunström ◽  
I. Di Marco ◽  
A. Grechnev ◽  
S. Lebègue ◽  
M. I. Katsnelson ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Intermediate Valence
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