scholarly journals Nonlinear Fermi liquid transport through a quantum dot in asymmetric tunnel junctions

2021 ◽  
Vol 104 (23) ◽  
Author(s):  
Kazuhiko Tsutsumi ◽  
Yoshimichi Teratani ◽  
Rui Sakano ◽  
Akira Oguri
2003 ◽  
Vol 90 (2) ◽  
Author(s):  
László Borda ◽  
Gergely Zaránd ◽  
Walter Hofstetter ◽  
B. I. Halperin ◽  
Jan von Delft

2001 ◽  
Vol 696 ◽  
Author(s):  
Gregory L. Snider ◽  
Alexei O. Orlov ◽  
Ravi K. Kummamuru ◽  
Rajagopal Ramasubramaniam ◽  
Islamshah Amlani ◽  
...  

AbstractAn overview is given of the quantum-dot cellular automata (QCA) architecture, along with a summary of experimental demonstrations of QCA devices. QCA is a transistorless computation paradigm that can provide a solution to such challenging issues as device and power density. The basic building blocks of the QCA architecture, such as AND, OR gates and clocked cells have been demonstrated and will be presented here. The quantum dots used in the experiments to date are metal islands that are coupled by capacitors and tunnel junctions, and devices operate only at very low temperatures. For QCA to be used in practical devices, the operating temperature must be raised, and issues such as background charge must be addressed. An introduction will be given to these issues and possible solutions.


2008 ◽  
Vol 100 (3) ◽  
Author(s):  
Christophe Mora ◽  
Xavier Leyronas ◽  
Nicolas Regnault

2011 ◽  
Vol 80 (10) ◽  
pp. 103701 ◽  
Author(s):  
Masataka Danura ◽  
Kazutaka Kudo ◽  
Yoshihiro Oshiro ◽  
Shingo Araki ◽  
Tatsuo C. Kobayashi ◽  
...  

2011 ◽  
Vol 25 (17) ◽  
pp. 1487-1501
Author(s):  
ALI SHAHHOSEINI ◽  
KAMYAR SAGHAFI ◽  
MOHAMMAD KAZEM MORAVVEJ-FARSHI ◽  
RAHIM FAEZ

We propose a triple-tunnel junction single electron transistor (TTJ-SET). The proposed structure consists of a metallic quantum-dot island that is capacitive coupled to a gate contact and surrounded by three tunnel junctions. To the best of our knowledge, this is the first instance of introducing this new structure that is suitable for both digital and analog applications. I–V D characteristics of the proposed TTJ-SET, simulated by a HSPICE macro model for various gate voltages, are in excellent agreement with those obtained by SIMON, which is a Monte-Carlo based simulator. We show how one can design a digital inverter by using a single TTJ-SET. We also show that, under suitable conditions, a TTJ-SET can operate as a full- or half-wave analog rectifier.


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