Optical bowing in zinc chalcogenide semiconductor alloys

1986 ◽  
Vol 34 (8) ◽  
pp. 5992-5995 ◽  
Author(s):  
James E. Bernard ◽  
Alex Zunger
Keyword(s):  
Chalcogenide Semiconductor ◽  
Semiconductor Alloys ◽  
Zinc Chalcogenide

scholarly journals Stoichiometric Engineering of Chalcogenide Semiconductor Alloys for Nanophotonic Applications

2019 ◽  
Vol 31 (14) ◽  
pp. 1807083 ◽  
Author(s):  
Davide Piccinotti ◽  
Behrad Gholipour ◽  
Jin Yao ◽  
Kevin F. MacDonald ◽  
Brian E. Hayden ◽  
...  
Keyword(s):  
Chalcogenide Semiconductor ◽  
Semiconductor Alloys

scholarly journals A germanium and zinc chalcogenide as an anode for a high-capacity and long cycle life lithium battery

RSC Advances ◽  
2019 ◽  
Vol 9 (60) ◽  
pp. 35045-35049
Author(s):  
Xu Chen ◽  
Jian Zhou ◽  
Jiarui Li ◽  
Haiyan Luo ◽  
Lin Mei ◽  
...  
Keyword(s):  
Energy Storage ◽  
High Performance ◽  
Lithium Battery ◽  
Large Scale ◽  
High Capacity ◽  
Lithium Ion ◽  
Energy Storage Devices ◽  
Storage Devices ◽  
Long Cycle Life ◽  
Zinc Chalcogenide

High-performance lithium ion batteries are ideal energy storage devices for both grid-scale and large-scale applications.

A Dynamic Model of III-V Ternary Semiconductor Alloys in the Epitaxial Growth

1994 ◽  
Vol 340 ◽  
Author(s):  
Bing-Lin Gu ◽  
Jing-Zhi Yu ◽  
Xiao Hu ◽  
Kaoru Ohno ◽  
Yoshiyuki Kawazoe
Keyword(s):  
Dynamic Model ◽  
Ground State ◽  
Wave Method ◽  
Semiconductor Alloys ◽  
Concentration Wave ◽  
Surface Layers ◽  
Ordered Structures ◽  
Effective Interactions ◽  
Ternary Semiconductor ◽  
The Difference

ABSTRACTA concentration wave method for several interpenetrating Bravais sublattices is presented by considering the intralayer and interlayer effective interactions and the difference between the surface layers and the deeper layers in III – V alloys. The ground state ordered structures of ternary III – V semiconductor alloys are deduced and a dynamic model is established.

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