Comment on ‘‘Fluctuations of the hot-carrier state-occupancy function in homogeneous semiconductors’’

1989 ◽  
Vol 40 (17) ◽  
pp. 11958-11960 ◽  
Author(s):  
S. V. Gantsevich ◽  
V. L. Gurevich ◽  
R. Katilius
Keyword(s):  
Carrier State ◽  
Hot Carrier ◽  
Occupancy Function

Fluctuations of the hot-carrier state-occupancy function in homogeneous semiconductors

1988 ◽  
Vol 37 (15) ◽  
pp. 8882-8887 ◽  
Author(s):  
J. P. Nougier ◽  
J. C. Vaissiere
Keyword(s):  
Carrier State ◽  
Hot Carrier ◽  
Occupancy Function

USING OPTICALLY DETECTED CYCLOTRON RESONANCE TO STUDY ELECTRON-EXCITON AND ELECTRON-PHONON INTERACTIONS IN SEMICONDUCTORS

1993 ◽  
Vol 07 (08) ◽  
pp. 501-523
Author(s):  
TATSUYA TOMARU ◽  
TYUZI OHYAMA ◽  
EIZO OTSUKA
Keyword(s):  
Relaxation Process ◽  
Cyclotron Resonance ◽  
Carrier State ◽  
Polar Optical Phonon ◽  
Carrier Distribution ◽  
Electron Hole ◽  
Hot Carrier ◽  
Carrier Temperature ◽  
Optically Detected ◽  
Effective Carrier

We review our optically detected cyclotron resonance (ODCR) studies extending over Ge, Si and ZnSe. The following three subjects are taken up: (1) Impact dissociation of excitons by free carriers, which is dominated by electron-electron and hole-hole interactions rather than by electron-hole interaction. (2) The hot-carrier state produced in Ge and Si by cyclotron resonance is discussed in terms of hot-carrier-distribution function, effective carrier temperature, and carrier kinetics. (3) The relaxation process of photoexcited carriers in ZnSe is discussed. This relaxation process is found to be dominated by electron-polar-optical-phonon interaction, which gives rise to the polaron effect and to resonant formation of free excitons following one-LO-phonon emission. Thermally detected cyclotron resonance (TDCR) is also introduced.

PERIODIC OSCILLATIONS AND TURBULENCE OF HOT-CARRIER PLASMA AT 4.2 K IN n-GaAs

1981 ◽  
Vol 42 (C7) ◽  
pp. C7-51-C7-56
Author(s):  
K. Aoki ◽  
T. Kobayashi ◽  
K. Yamamoto
Keyword(s):  
Periodic Oscillations ◽  
Hot Carrier

HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
C. BERGONZONI ◽  
R. BENECCHI ◽  
P. CAPRARA
Keyword(s):  
Hot Carrier ◽  
Hot Carrier Stress ◽  
Induced Changes

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

THE IMPACT OF DIFFERENT HOT-CARRIER-DEGRADATION COMPONENTS ON THE OPTIMIZATION OF SUBMICRON n-CHANNEL LDD TRANSISTORS

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-787-C4-790
Author(s):  
P. T.J. BIERMANS ◽  
T. POORTER ◽  
H. J.H. MERKS-EPPINGBROEK
Keyword(s):  
Hot Carrier ◽  
The Impact ◽  
Hot Carrier Degradation

A Glanzmann’s Thrombasthenia Cluster Among Iraqi Jews in Israel

1984 ◽  
Vol 52 (03) ◽  
pp. 230-231 ◽  
Author(s):  
U Seligsohn ◽  
S Rososhansky
Keyword(s):  
Total Population ◽  
Carrier State ◽  
Calculated Frequency ◽  
Jewish Origin ◽  
Glanzmann’S Thrombasthenia ◽  
Glanzmann's Thrombasthenia

SummaryA country-wide survey of Glanzmann’s thrombasthenia in Israel identified 44 patients. The patients belong to 23 unrelated families, 17 of whom are of Iraqi Jewish origin. The frequency of thrombasthenia among Iraqi Jews in Israel (total population 270,000) is 1:7714 and thus the calculated frequency of the carrier state is 2.3%.

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