PERIODIC OSCILLATIONS AND TURBULENCE OF HOT-CARRIER PLASMA AT 4.2 K IN n-GaAs

1981 ◽  
Vol 42 (C7) ◽  
pp. C7-51-C7-56
Author(s):  
K. Aoki ◽  
T. Kobayashi ◽  
K. Yamamoto
Keyword(s):  
Periodic Oscillations ◽  
Hot Carrier

Quasi-Periodic Oscillations in Dwarf Novae

1979 ◽  
Vol 46 ◽  
pp. 77-88
Author(s):  
Edward L. Robinson
Keyword(s):  
Binary Systems ◽  
Outer Edge ◽  
Light Curves ◽  
Close Binary ◽  
Bright Spot ◽  
Dwarf Novae ◽  
Periodic Oscillations ◽  
High Frequencies ◽  
Short Period ◽  
Typical Time

Three distinct kinds of rapid variations have been detected in the light curves of dwarf novae: rapid flickering, short period coherent oscillations, and quasi-periodic oscillations. The rapid flickering is seen in the light curves of most, if not all, dwarf novae, and is especially apparent during minimum light between eruptions. The flickering has a typical time scale of a few minutes or less and a typical amplitude of about .1 mag. The flickering is completely random and unpredictable; the power spectrum of flickering shows only a slow decrease from low to high frequencies. The observations of U Gem by Warner and Nather (1971) showed conclusively that most of the flickering is produced by variations in the luminosity of the bright spot near the outer edge of the accretion disk around the white dwarf in these close binary systems.

HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-779-C4-782 ◽  
Author(s):  
C. BERGONZONI ◽  
R. BENECCHI ◽  
P. CAPRARA
Keyword(s):  
Hot Carrier ◽  
Hot Carrier Stress ◽  
Induced Changes

ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-651-C4-655 ◽  
Author(s):  
R. BELLENS ◽  
P. HEREMANS ◽  
G. GROESENEKEN ◽  
H. E. MAES
Keyword(s):  
Mos Transistors ◽  
Charge Pumping ◽  
Hot Carrier ◽  
Hot Carrier Degradation

THE IMPACT OF DIFFERENT HOT-CARRIER-DEGRADATION COMPONENTS ON THE OPTIMIZATION OF SUBMICRON n-CHANNEL LDD TRANSISTORS

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-787-C4-790
Author(s):  
P. T.J. BIERMANS ◽  
T. POORTER ◽  
H. J.H. MERKS-EPPINGBROEK
Keyword(s):  
Hot Carrier ◽  
The Impact ◽  
Hot Carrier Degradation

Circuit Voltage Probe Based on Time-Integrated Measurements of Optical Emission From Leakage Current

2002 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
James C. Tsang ◽  
Moyra K. McManus ◽  
Mark B. Ketchen
Keyword(s):  
Leakage Current ◽  
Voltage Drop ◽  
Optical Emission ◽  
Channel Length ◽  
Operating Conditions ◽  
Power Circuit ◽  
Hot Carrier ◽  
Optical Inspection ◽  
Low Threshold ◽  
Circuit Power

Abstract Hot-carrier luminescence emission is used to diagnose the cause of excess quiescence current, IDDQ, in a low power circuit implemented in CMOS 7SF technology. We found by optical inspection of the chip that the high IDDQ is related to the low threshold, Vt, device process and in particular to transistors with minimum channel length (0.18 μm). In this paper we will also show that it is possible to gain knowledge regarding the operating conditions of the IC from the analysis of optical emission due to leakage current, aside from simply locating defects and failures. In particular, we will show how it is possible to calculate the voltage drop across the circuit power grid from time-integrated acquisitions of leakage luminescence.

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