USING OPTICALLY DETECTED CYCLOTRON RESONANCE TO STUDY ELECTRON-EXCITON AND ELECTRON-PHONON INTERACTIONS IN SEMICONDUCTORS

1993 ◽  
Vol 07 (08) ◽  
pp. 501-523
Author(s):  
TATSUYA TOMARU ◽  
TYUZI OHYAMA ◽  
EIZO OTSUKA

We review our optically detected cyclotron resonance (ODCR) studies extending over Ge, Si and ZnSe. The following three subjects are taken up: (1) Impact dissociation of excitons by free carriers, which is dominated by electron-electron and hole-hole interactions rather than by electron-hole interaction. (2) The hot-carrier state produced in Ge and Si by cyclotron resonance is discussed in terms of hot-carrier-distribution function, effective carrier temperature, and carrier kinetics. (3) The relaxation process of photoexcited carriers in ZnSe is discussed. This relaxation process is found to be dominated by electron-polar-optical-phonon interaction, which gives rise to the polaron effect and to resonant formation of free excitons following one-LO-phonon emission. Thermally detected cyclotron resonance (TDCR) is also introduced.

2020 ◽  
Vol 6 (43) ◽  
pp. eabb1336 ◽  
Author(s):  
Ti Wang ◽  
Linrui Jin ◽  
Juanita Hidalgo ◽  
Weibin Chu ◽  
Jordan M. Snaider ◽  
...  

Successful implementation of hot carrier solar cells requires preserving high carrier temperature as carriers migrate through the active layer. Here, we demonstrated that addition of alkali cations in hybrid organic-inorganic lead halide perovskites led to substantially elevated carrier temperature, reduced threshold for phonon bottleneck, and enhanced hot carrier transport. The synergetic effects from the Rb, Cs, and K cations result in ~900 K increase in the effective carrier temperature at a carrier density around 1018 cm−3 with an excitation 1.45 eV above the bandgap. In the doped thin films, the protected hot carriers migrate 100 s of nanometers longer than the undoped sample as imaged by ultrafast microscopy. We attributed these improvements to the relaxation of lattice strain and passivation of halide vacancies by alkali cations based on x-ray structural characterizations and first principles calculations.


1992 ◽  
Vol 46 (15) ◽  
pp. 9390-9399 ◽  
Author(s):  
Tatsuya Tomaru ◽  
Tyuzi Ohyama ◽  
Eizo Otsuka ◽  
Minoru Isshiki ◽  
Kenzo Igaki

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Porteanu ◽  
A. Glozman ◽  
E. Lifshitz ◽  
A. Eychmüller ◽  
H. Weller

AbstractCdS/HgS/CdS nanoparticles consist of a CdS core, epitaxially covered by one or two monolayers of HgS and additional cladding layers of CdS. The present paper describes our efforts to identify the influence of CdS/HgS/CdS interfaces on the localization of the photogenerated carriers deduced from the magneto-optical properties of the materials. These were investigated by the utilization of optically detected magnetic resonance (ODMR) and double-beam photoluminescence spectroscopy. A photoluminescence (PL) spectrum of the studied material, consists of a dominant exciton located at the HgS layer, and additional non-excitonic band, presumably corresponding to the recombination of trapped carriers at the interface. The latter band can be attenuated using an additional red excitation. The ODMR measurements show the existence of two kinds of electron-hole recombination. These electron-hole pairs maybe trapped either at a twin packing of a CdS/HgS interface, or at an edge dislocation of an epitaxial HgS or a CdS cladding layer.


1992 ◽  
Vol 7 (3B) ◽  
pp. B271-B273 ◽  
Author(s):  
R Sakamoto ◽  
T Kohno ◽  
T Kamiyoshi ◽  
M Inoue ◽  
S Nakajima ◽  
...  

2001 ◽  
Vol 15 (17n19) ◽  
pp. 696-699 ◽  
Author(s):  
G. Fonthal ◽  
M. de los Rios ◽  
J. Quintero ◽  
N. Piraquive ◽  
H. Ariza-Calderón

We analyzed the free to acceptor (e-A) photoluminescence transition on a GaAs:Ge sample using the hot carrier temperature and the Kane's DOS. This latter temperature was calculated by the spectra largest energy tail. While the lattice temperature was put in the e-A Eagles' shape equation, the fitting was poor but if the modified line was put into the equation, the fitting was better. So, the ionization impurity energy, the band gap, the Fermi level and the band tail can be measured with a better precision than the measurements traditionally made with this method, Additional information about phonons participant can be obtained. In conclusion, the hot carrier temperature and the density of states due to the impurity concentration should be used in the e-A transition photoluminescence analysis.


2020 ◽  
Vol 67 (6) ◽  
pp. 2243-2248
Author(s):  
Weizhuo Gan ◽  
Raphael J. Prentki ◽  
Fei Liu ◽  
Jianhui Bu ◽  
Kun Luo ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document