Potential and magnetic field confinement of shallow donor impurities in semiconductor quantum wells

1989 ◽  
Vol 40 (2) ◽  
pp. 1265-1270 ◽  
Author(s):  
G. Brozak ◽  
B. D. McCombe ◽  
D. M. Larsen
2011 ◽  
Vol 25 (32) ◽  
pp. 2451-2459 ◽  
Author(s):  
U. YESILGUL ◽  
F. UNGAN ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN

The intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our calculations have revealed the dependence of the intersubband transitions and impurity binding energy on the magnetic field strength and the shape of the quantum wells.


2015 ◽  
Vol 91 (23) ◽  
Author(s):  
Kankan Cong ◽  
Yongrui Wang ◽  
Ji-Hee Kim ◽  
G. Timothy Noe ◽  
Stephen A. McGill ◽  
...  

1995 ◽  
Vol 17 (11-12) ◽  
pp. 1549-1553 ◽  
Author(s):  
V. D. Kulakovskii ◽  
M. G. Tyazhlov ◽  
S. I. Gubarev ◽  
D. R. Yakovlev ◽  
A. Waag ◽  
...  

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