THE INTERSUBBAND TRANSITIONS AND BINDING ENERGY OF SHALLOW DONOR IMPURITIES IN DIFFERENT SHAPED QUANTUM WELLS UNDER THE MAGNETIC FIELD
2011 ◽
Vol 25
(32)
◽
pp. 2451-2459
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Keyword(s):
The intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our calculations have revealed the dependence of the intersubband transitions and impurity binding energy on the magnetic field strength and the shape of the quantum wells.
2012 ◽
Vol 26
(06)
◽
pp. 1250013
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2009 ◽
Vol 23
(26)
◽
pp. 5109-5118
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Keyword(s):
2010 ◽
Vol 374
(29)
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pp. 2980-2984
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Keyword(s):
2011 ◽
Vol 10
(04n05)
◽
pp. 665-668
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1994 ◽
Vol 6
(3)
◽
pp. 757-770
◽
2007 ◽
Vol 21
(08n09)
◽
pp. 1563-1567
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Keyword(s):
2021 ◽
Vol 4
(1)
◽
pp. 1-6
2007 ◽
Vol 21
(17)
◽
pp. 3035-3044
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Keyword(s):
2013 ◽
Vol 23
(3)
◽
pp. 275
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