scholarly journals Superfluorescence from photoexcited semiconductor quantum wells: Magnetic field, temperature, and excitation power dependence

2015 ◽  
Vol 91 (23) ◽  
Author(s):  
Kankan Cong ◽  
Yongrui Wang ◽  
Ji-Hee Kim ◽  
G. Timothy Noe ◽  
Stephen A. McGill ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Excitation Power ◽  
Power Dependence ◽  
Semiconductor Quantum Wells ◽  
Field Temperature

DYNAMICS OF SPATIALLY INDIRECT EXCITONS IN SEMICONDUCTOR HETEROSTRUCTURES IN MAGNETIC FIELDS

2007 ◽  
Vol 21 (08n09) ◽  
pp. 1574-1578
Author(s):  
KAZUHITO UCHIDA ◽  
NOBORU MIURA ◽  
YASUHIRO SHIRAKI
Keyword(s):  
Magnetic Fields ◽  
Quantum Wells ◽  
Excitation Power ◽  
Semiconductor Heterostructures ◽  
Type Ii ◽  
Power Dependence ◽  
Indirect Excitons ◽  
Peak Energy ◽  
Excitation Laser ◽  
The Magnetic Field

Magnetophotoluminescence from spatially separated excitons in type-II semiconductor heterostructures, GaP/AlP neighboring confinement structures (NCSs) have been investigated. The sample studied consists of adjacent GaP and AlP quantum wells sandwiched between AlGaP barriers. The excitation power dependence and the well thickness dependence of the exciton PL are studied in magnetic fields applied perpendicular to the heterointerfaces. Compared to the thinner NCS, the magneto-PL of the wider NCS is strongly modified by the excitation power; the magnetic field dependence of the PL peak energy clearly changes from the anomalous red-shifts into the diamagnetic shifts with increasing excitation laser power.

Magnetic-field-induced dissociation of bound excitons in semi-magnetic semiconductor quantum wells

1995 ◽  
Vol 17 (11-12) ◽  
pp. 1549-1553 ◽  
Author(s):  
V. D. Kulakovskii ◽  
M. G. Tyazhlov ◽  
S. I. Gubarev ◽  
D. R. Yakovlev ◽  
A. Waag ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Magnetic Semiconductor ◽  
Semiconductor Quantum Wells

THE INTERSUBBAND TRANSITIONS AND BINDING ENERGY OF SHALLOW DONOR IMPURITIES IN DIFFERENT SHAPED QUANTUM WELLS UNDER THE MAGNETIC FIELD

2011 ◽  
Vol 25 (32) ◽  
pp. 2451-2459 ◽  
Author(s):  
U. YESILGUL ◽  
F. UNGAN ◽  
E. KASAPOGLU ◽  
H. SARI ◽  
I. SÖKMEN
Keyword(s):  
Magnetic Field ◽  
Binding Energy ◽  
Field Strength ◽  
Variational Method ◽  
Quantum Wells ◽  
Shallow Donor ◽  
Intersubband Transitions ◽  
Mass Approximation ◽  
Semiconductor Quantum Wells ◽  
The Magnetic Field

The intersubband transitions and impurity binding energy in differently shaped semiconductor quantum wells under a magnetic field are calculated using a variational method within the effective mass approximation. Our calculations have revealed the dependence of the intersubband transitions and impurity binding energy on the magnetic field strength and the shape of the quantum wells.

Recombination Mechanism in Short-Wavelength GaN/AlGaN Quantum Wells

2004 ◽  
Vol 831 ◽  
Author(s):  
D. Fuhrmann ◽  
T. Retzlaff ◽  
U. Rossow ◽  
A. Hangleiter
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Light Emission ◽  
Excitation Power ◽  
Ultraviolet Region ◽  
Nonradiative Recombination ◽  
Power Dependence ◽  
Recombination Mechanism ◽  
Quantum Well Structures ◽  
Internal Efficiency

ABSTRACTTo date, light emission by AlGaN-based heterostructures and LED's operating in the ultraviolet region is far less efficient than emission from longer wavelength structures based on GaInN. We have realized GaN/AlGaN quantum well structures emitting in the 360–320 nm range with peak room-temperature internal efficiencies reaching more than 20 %. From detailed studies of the temperature and excitation power dependence of the efficiency we find that excitons play a crucial role enhancing radiative recombination in such structures. Except for the peak internal efficiency, which reaches 73 % in GaInN/GaN, the overall behavior in GaN/AlGaN and GaInN/GaN is very similar, suggesting that the main difference is the nonradiative recombination mechanism.

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