Morphology of monatomic step edges on vicinal Si(001)

Vicinal Si (001) surfaces are interesting because they are good substrates for the growth of III-V semiconductors. Spots in RHEED patterns from vicinal surfaces are split due to scattering from ordered step arrays and this splitting can be used to determine the misorientation angle, using kinematic arguments. Kinematic theory is generally regarded to be inadequate for the calculation of RHEED intensities; however, only a few dynamical RHEED simulations have been attempted for vicinal surfaces. The multislice formulation of Cowley and Moodie with a recently developed edge patching method was used to calculate RHEED patterns from vicinal Si (001) surfaces. The calculated patterns are qualitatively similar to published experimental results and the positions of the split spots quantitatively agree with kinematic calculations.RHEED patterns were calculated for unreconstructed (bulk terminated) Si (001) surfaces misoriented towards [110] ,with an energy of 15 keV, at an incident angle of 36.63 mrad ([004] bragg condition), and a beam azimuth of [110] (perpendicular to the step edges) and the incident beam pointed down the step staircase.

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Step Edges in Thin Films of Lamellar-Forming Diblock Copolymer

Macromolecules ◽

10.1021/ma302143q ◽

2012 ◽

Vol 45 (23) ◽

pp. 9531-9538 ◽

Cited By ~ 14

Author(s):

P. Stasiak ◽

J. D. McGraw ◽

K. Dalnoki-Veress ◽

M. W. Matsen

Keyword(s):

Thin Films ◽

Diblock Copolymer ◽

Step Edges

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Role of step edges on the structure formation of α-6T on Ag(441)

Surface Science ◽

10.1016/j.susc.2017.09.008 ◽

2018 ◽

Vol 667 ◽

pp. 17-24 ◽

Cited By ~ 1

Author(s):

Thorsten Wagner ◽

Daniel Roman Fritz ◽

Zdena Rudolfová ◽

Peter Zeppenfeld

Keyword(s):

Structure Formation ◽

Step Edges

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Oxidation of Au on vicinal W(110): Role of step edges and facets

Physical Review B ◽

10.1103/physrevb.75.205417 ◽

2007 ◽

Vol 75 (20) ◽

Cited By ~ 1

Author(s):

A. Varykhalov ◽

O. Rader ◽

V. K. Adamchuk ◽

W. Gudat ◽

B. E. Koel ◽

...

Keyword(s):

Step Edges

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A New, Nearly Single-Domain Surface Structure of Homoepitaxial Diamondr (001) Films

MRS Proceedings ◽

10.1557/proc-423-433 ◽

1996 ◽

Vol 423 ◽

Cited By ~ 1

Author(s):

Yalei Kuang ◽

Naesung Lee ◽

Andrzej Badzian ◽

Teresa Badzian ◽

Tien T. Tsong

Keyword(s):

Surface Structure ◽

Natural Diamond ◽

Single Layer ◽

Chemical Vapor ◽

Single Domain ◽

Scanning Tunneling ◽

Tunneling Microscopy ◽

Plasma Chemical Vapor Deposition ◽

Boron Doped ◽

Step Edges

AbstractBoron-doped homoepitaxial diamond films were grown on natural diamond (001) substrates using microwave-assisted plasma chemical vapor deposition techniques. The surface structures were investigated using scanning tunneling microscopy (STM). This showed a dimertype 2×1 reconstruction structure with single-layer steps where dimer rows on the upper terrace are normal to or parallel to the step edges. We found that dimer rows parallel to the step edges are much longer than those normal to the step edges. The nearly single-domain surface structure observed by STM is in agreement with the low-energy electron diffraction (LEED) patterns from these surfaces. The high atomic resolution STM image showed that the local 1×1 configurations exist.

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Ab initio Study for Adsorption and Desorption Behavior at Step Edges of AlN(0001) and GaN(0001) Surfaces

10.7567/ssdm.2019.f-5-01 ◽

2019 ◽

Author(s):

T. Akiyama ◽

T. Ohka ◽

K. Nakamura ◽

T. Ito

Keyword(s):

Ab Initio ◽

Adsorption And Desorption ◽

Step Edges

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Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

Nature Communications ◽

10.1038/s41467-018-04479-z ◽

2018 ◽

Vol 9 (1) ◽

Cited By ~ 23

Author(s):

Tao He ◽

Yanfei Wu ◽

Gabriele D’Avino ◽

Elliot Schmidt ◽

Matthias Stolte ◽

...

Keyword(s):

Organic Semiconductors ◽

Step Edges

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Electrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current Mapping

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.929 ◽

2015 ◽

Vol 821-823 ◽

pp. 929-932 ◽

Cited By ~ 4

Author(s):

Filippo Giannazzo ◽

Stefan Hertel ◽

Andreas Albert ◽

Gabriele Fisichella ◽

Antonino La Magna ◽

...

Keyword(s):

Electrical Properties ◽

Barrier Height ◽

Free Standing ◽

Conductive Atomic Force Microscopy ◽

Force Microscopy ◽

Atomic Force ◽

P Type ◽

Micrometer Scale ◽

Contact Size ◽

Step Edges

The electrical properties of the interface between quasi free standing bilayer graphene (QFBLG) and SiC(0001) have been investigated by nanoscale resolution current measurements using conductive atomic force microscopy (CAFM). I-V analyses were carried out on Au-capped QFBLG contacts with different sizes (from 200 down to 0.5 μm) fabricated on SiC samples with different miscut angles (from on-axis to 3.5° off-axis). The extracted QFBLG/SiC Schottky barrier height (SBH) was found to depend on the contact size. SBH values ∼0.9-1 eV were obtained for large contacts, whereas a gradual increase was observed below a critical (micrometer scale) contact size (depending on the SiC miscut angle) up to values approaching ∼1.5 eV. Nanoscale resolution current mapping on bare QFLBG contacts revealed that SiC step edges and facets represent preferential current paths causing the effective SBH lowering for larger contacts. The reduced barrier height in these regions can be explained in terms of a reduced doping of QFBLG from SiC substrate at (11-20) step edges with respect to the p-type doping on the (0001) terraces.

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