Electrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current Mapping

2015 ◽  
Vol 821-823 ◽  
pp. 929-932 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Gabriele Fisichella ◽  
Antonino La Magna ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Free Standing ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type ◽  
Micrometer Scale ◽  
Contact Size ◽  
Step Edges

The electrical properties of the interface between quasi free standing bilayer graphene (QFBLG) and SiC(0001) have been investigated by nanoscale resolution current measurements using conductive atomic force microscopy (CAFM). I-V analyses were carried out on Au-capped QFBLG contacts with different sizes (from 200 down to 0.5 μm) fabricated on SiC samples with different miscut angles (from on-axis to 3.5° off-axis). The extracted QFBLG/SiC Schottky barrier height (SBH) was found to depend on the contact size. SBH values ∼0.9-1 eV were obtained for large contacts, whereas a gradual increase was observed below a critical (micrometer scale) contact size (depending on the SiC miscut angle) up to values approaching ∼1.5 eV. Nanoscale resolution current mapping on bare QFLBG contacts revealed that SiC step edges and facets represent preferential current paths causing the effective SBH lowering for larger contacts. The reduced barrier height in these regions can be explained in terms of a reduced doping of QFBLG from SiC substrate at (11-20) step edges with respect to the p-type doping on the (0001) terraces.

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

scholarly journals Nanofriction characteristics of h-BN with electric field induced electrostatic interaction

Friction ◽  
2020 ◽  
Author(s):  
Kemeng Yu ◽  
Kun Zou ◽  
Haojie Lang ◽  
Yitian Peng
Keyword(s):  
Electric Field ◽  
Electrostatic Interaction ◽  
Hexagonal Boron Nitride ◽  
Electrostatic Force ◽  
Solid Lubricants ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Graphene Devices ◽  
P Type

AbstractThe nanofriction properties of hexagonal boron nitride (h-BN) are vital for its application as a substrate for graphene devices and solid lubricants in micro- and nano-electromechanical devices. In this work, the nanofriction characteristics of h-BN on Si/SiO2 substrates with a bias voltage are explored using a conductive atomic force microscopy (AFM) tip sliding on the h-BN surface under different substrate bias voltages. The results show that the nanofriction on h-BN increases with an increase in the applied bias difference (Vt−s) between the conductive tip and the substrate. The nanofriction under negative Vt−s is larger than that under positive Vt−s. The variation in nanofriction is relevant to the electrostatic interaction caused by the charging effect. The electrostatic force between opposite charges localized on the conductive tip and at the SiO2/Si interface increases with an increase in Vt−s. Owing to the characteristics of p-type silicon, a positive Vt−s will first cause depletion of majority carriers, which results in a difference of nanofriction under positive and negative Vt−s. Our findings provide an approach for manipulating the nanofriction of 2D insulating material surfaces through an applied electric field, and are helpful for designing a substrate for graphene devices.

Towards a unified description of the charge transport mechanisms in conductive atomic force microscopy studies of semiconducting polymers

Nanoscale ◽  
2014 ◽  
Vol 6 (18) ◽  
pp. 10596-10603 ◽  
Author(s):  
D. Moerman ◽  
N. Sebaihi ◽  
S. E. Kaviyil ◽  
P. Leclère ◽  
R. Lazzaroni ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Carrier Mobility ◽  
Semiconducting Polymers ◽  
Transport Mechanisms ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Local Current ◽  
Unified Description

The nanoscale electrical properties of fibrillate poly-3-hexylthiophene are studied using conducting-AFM. The conditions for the prevalence of either local or bulk resistances dominated regime are identified. As local current is space charge limited, an analytical model is derived to determine locally carrier mobility and density.

Clustering of Gold on 6H-SiC and Local Nanoscale Electrical Properties

2007 ◽  
Vol 131-133 ◽  
pp. 517-522
Author(s):  
Francesco Ruffino ◽  
Filippo Giannazzo ◽  
Fabrizio Roccaforte ◽  
Vito Raineri ◽  
Maria Grazia Grimaldi
Keyword(s):  
Atomic Force Microscopy ◽  
Electrical Properties ◽  
Ballistic Transport ◽  
Gold Nanoclusters ◽  
Nanostructured Material ◽  
Self Organization ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Electron Quantum

In this work, a methodology, based on a self-organization process, to form gold nanoclusters on the 6H-SiC surface, is illustrated. By scanning electron microscopy and atomic force microscopy the gold self-organization induced by annealing processes was studied and modelled by classical limited surface diffusion ripening theories. These studies allowed us to fabricate Au nanoclusres/SiC nanostructured materials with tunable structural properties. The local electrical properties of such a nanostructured material were probed, by conductive atomic force microscopy collecting high statistics of I-V curves. The main observed result was the Schottky barrier height (SBH) dependence on the cluster size. This behaviour is interpreted considering the physics of few electron quantum dots merged with the ballistic transport. A quite satisfying agreement between the theoretical forecast behaviour and the experimental data has been found.

Estimation of the Crystallinity of P-type Hydrogenated Nanocrystalline Cubic Silicon Carbide by Conductive Atomic Force Microscopy

2012 ◽  
Vol 1426 ◽  
pp. 347-352
Author(s):  
Daisuke Hamashita ◽  
Yasuyoshi Kurokawa ◽  
Makoto Konagai
Keyword(s):  
Silicon Carbide ◽  
Atomic Force Microscopy ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Conductive Atomic Force Microscopy ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type ◽  
Cubic Silicon Carbide

ABSTRACTP-type hydrogenated nanocrystalline cubic silicon carbide is a promising material for the emitter of n-type crystalline silicon heterojunction solar cell due to its lower light absorption and wider bandgap of 2.2 eV. The electrical properties of hydrogenated nanocrystalline cubic silicon carbide can be influenced by its crystallinity. In this study, we propose the use of conductive atomic force microscopy (Conductive-AFM) to evaluate the crystalline volume fraction (fc) of p-nc-3C-SiC:H thin films (20∼30 nm) as a new method instead of Raman scattering spectroscopy, X-ray diffraction, and spectroscopic ellipsometry.

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