Optical Fermi-edge singularities in a one-dimensional electron system with tunable effective mass

1995 ◽  
Vol 51 (7) ◽  
pp. 4285-4288 ◽  
Author(s):  
J. M. Calleja ◽  
A. R. Goñi ◽  
A. Pinczuk ◽  
B. S. Dennis ◽  
J. S. Weiner ◽  
...  
Keyword(s):  
Effective Mass ◽  
Electron System ◽  
Dimensional Electron ◽  
One Dimensional ◽  
Edge Singularities ◽  
Fermi Edge ◽  
Dimensional Electron System

Fermi-edge singularities in a one-dimensional electron system in magnetic field

2001 ◽  
Vol 119 (1) ◽  
pp. 55-58 ◽  
Author(s):  
W.G Stallard ◽  
A.S Plaut ◽  
S Thoms ◽  
M.C Holland ◽  
S.P Beaumont ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron System ◽  
Dimensional Electron ◽  
One Dimensional ◽  
Edge Singularities ◽  
Fermi Edge ◽  
Dimensional Electron System

scholarly journals Structural order and melting of a quasi-one-dimensional electron system

2016 ◽  
Vol 94 (4) ◽  
Author(s):  
David G. Rees ◽  
Niyaz R. Beysengulov ◽  
Yoshiaki Teranishi ◽  
Chun-Shuo Tsao ◽  
Sheng-Shiuan Yeh ◽  
...  
Keyword(s):  
Electron System ◽  
Dimensional Electron ◽  
One Dimensional ◽  
Structural Order ◽  
Dimensional Electron System

scholarly journals Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET

2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
Yasuhisa Omura
Keyword(s):  
Effective Mass ◽  
Conduction Band ◽  
Threshold Voltage ◽  
Mathematical Formulation ◽  
Electron System ◽  
Band Model ◽  
Dimensional Electron ◽  
Dimensional Electron System ◽  
Low Dimensional ◽  
Band Nonparabolicity

This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this model produces realistic results for a sub-10-nm-thick Si layer surrounded by an SiO2layer. The major part of the discussion is focused on the low-dimensional electron system confined with insulator barriers. To examine the feasibility of our consideration, the model is applied to the threshold voltage of nanoscale SOI FinFETs and compared to prior experimental results. This paper also addresses a model of the effective mass of valence band holes assuming the nonparabolic condition.

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