Zeeman splitting andgfactor of heavy-hole excitons inInxGa1−xAs/GaAs quantum wells

AbstractLight emission from ZnMnTe/ZnMgTe structures with the quantum wells ZnTe containing monolayer manganese inclusions and quantum wells Zn_0.45Mn_0.15Te were investigated under the different excitation conditions. The heavy-hole exciton σ^+ and σ^– magnetic components show the unusual behavior concerning their energy shifts and intensities. It is possible to explain the Zeeman splitting of the heavy exciton emission band if the following factors are taken into account. Firstly, ZnMnTe/ZnMgTe quantum well structures are of the type II due to the strains as concerns to the electron and heavy hole. Secondly, the electron and hole magnetic sublevels population is far from equilibrium due to the fast energy transfer from the electron- hole system to the 3 d -shells of magnetic ions.

Download Full-text

Zeeman splitting of excitons in CdTe/CdMnTe quantum wells

Journal of Crystal Growth ◽

10.1016/s0022-0248(97)00530-7 ◽

1998 ◽

Vol 184-185 (1-2) ◽

pp. 942-946

Author(s):

G Fishman

Keyword(s):

Quantum Wells ◽

Zeeman Splitting

Download Full-text

Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

Journal of Nanomaterials ◽

10.1155/2019/5349291 ◽

2019 ◽

Vol 2019 ◽

pp. 1-7

Author(s):

Takuya Kawazu

Keyword(s):

Optical Properties ◽

Quantum Wells ◽

Valence Band ◽

Energy Barrier ◽

Heavy Hole ◽

Electronic States ◽

Light Hole ◽

Photoluminescence Excitation ◽

Band Mixing ◽

Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Download Full-text

Feasibility Of Novel Si-Based Interminiband Lasers

MRS Proceedings ◽

10.1557/proc-533-227 ◽

1998 ◽

Vol 533 ◽

Author(s):

Gregory Sun ◽

Lionel Friedman ◽

Richard A. Soref

Keyword(s):

Quantum Wells ◽

Current Density ◽

Population Inversion ◽

Heavy Hole ◽

Optical Gain ◽

Laser Structure ◽

Strained Si ◽

Superlattice Structures ◽

A Current

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

Download Full-text