Growth mechanism of thin silicon oxide films on Si(100) studied by medium-energy ion scattering

1995 ◽  
Vol 52 (3) ◽  
pp. 1759-1775 ◽  
Author(s):  
E. P. Gusev ◽  
H. C. Lu ◽  
T. Gustafsson ◽  
E. Garfunkel
2000 ◽  
Vol 18 (5) ◽  
pp. 2503 ◽  
Author(s):  
D. Landheer ◽  
P. Ma ◽  
W. N. Lennard ◽  
I. V. Mitchell ◽  
C. McNorgan

Materials ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1109
Author(s):  
Young Park ◽  
Seung Park ◽  
Kang-Won Jung ◽  
Yunju Hwang ◽  
Saurav Sorcar ◽  
...  

In the current work, stable prenucleated PbS quantum dots (QDs) with a sub-nanometer (0.8 nm) size have been successfully synthesized via a systematically designed experiment. A detailed analysis of critical nucleation, growth, and stability for such ultrasmall prenucleated clusters is done. The experimental strategy is based on controlled concentration, temperature and injection of respective precursors, thus enabling us to control nucleation rate and separation of stable sub-nanometer PbS QDs with size 0.8 nm. Significantly, by providing additional thermal energy to sub-nanometer PbS QDs, we achieved the fully nucleated cubic crystalline structure of PbS with size of around 1.5 nm. The size and composition of the prenucleated QDs are investigated by sophisticated tools like X-ray photoelectron spectroscopy (XPS) and medium energy ion scattering (MEIS) spectroscopy which confirms the synthesis of PbS with Pb2+ rich surface while the UV-Vis spectroscopy and X-ray diffraction (XRD) data suggests an alternative crystallization path. Non-classical nucleation theory is employed to substantiate the growth mechanism of prenucleated PbS QDs.


1993 ◽  
Vol 318 ◽  
Author(s):  
E.P. Gusev ◽  
H.C. Lu ◽  
T. Gustafsson ◽  
E. Garfunkel

ABSTRACTThe growth of ultra-thin oxide films by the thermal oxidation of silicon has been studied by low and medium energy ion scattering spectroscopies (LEIS and MEIS) and X-ray photoelectron spectroscopy (XPS). To help elucidate the diffusional and mechanistic aspects of oxide growth we have used sequential isotope oxidation (18O2 followed by 16O2). LEIS demonstrates that both 18O and 16O atoms are on the silicon surface under our growth conditions. MEIS also distinguishes 18O from 16O and gives a depth distribution for both with high accuracy. Our results show that several key aspects of the Deal-Grove model (oxygen diffusion to the Si-SiO2 interface and oxide formation at the interface) are consistent with our results for 50Å films. For very thin oxide films (15Å or less), we found a mixed isotopic distribution in the film, demonstrating more complex oxidation behavior.


2011 ◽  
Vol 209 (2) ◽  
pp. 262-265 ◽  
Author(s):  
D. Jalabert ◽  
D. Pelloux-Gervais ◽  
A. Béché ◽  
J. M. Hartmann ◽  
P. Gergaud ◽  
...  

1990 ◽  
Vol 202 ◽  
Author(s):  
J. Vrijmoeth ◽  
P.M. Zagwijn ◽  
J.W.M. Frenken ◽  
J.F. van der Veen

ABSTRACTThe surface structure of epitaxial NiSi2 films grown on Si (111) has been determined using a new method. The backscattering signals from subsequent Ni layers in the NiSi2 (111) surface are resolved.The topology of the NiSi2 (111) surface is concluded to be bulklike, i.e., it is terminated by a Si – Ni – Si triple layer.


2011 ◽  
Vol 605 (1-2) ◽  
pp. 220-224 ◽  
Author(s):  
Johan Gustafson ◽  
Andrew R. Haire ◽  
Christopher J. Baddeley

2007 ◽  
Vol 601 (2) ◽  
pp. 352-361 ◽  
Author(s):  
S.L. Harmer ◽  
L.V. Goncharova ◽  
R. Kolarova ◽  
W.N. Lennard ◽  
M.A. Muñoz-Márquez ◽  
...  

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