Local electronic structure of ZnS and ZnSe doped by Mn, Fe, Co, and Ni from x-ray-absorption near-edge structure studies

1996 ◽  
Vol 53 (3) ◽  
pp. 1119-1128 ◽  
Author(s):  
K. L/awniczak-Jabl/onska ◽  
R. J. Iwanowski ◽  
Z. Gol/acki ◽  
A. Traverse ◽  
S. Pizzini ◽  
...  
2009 ◽  
Vol 19 (37) ◽  
pp. 6804 ◽  
Author(s):  
J. G. Zhou ◽  
H. T. Fang ◽  
J. M. Maley ◽  
M. W. Murphy ◽  
J. Y. Peter Ko ◽  
...  

2017 ◽  
Vol 710 ◽  
pp. 843-849 ◽  
Author(s):  
Turghunjan Gholam ◽  
Abduleziz Ablat ◽  
Mamatrishat Mamat ◽  
Rong Wu ◽  
Aimierding Aimidula ◽  
...  

1996 ◽  
Vol 11 (9) ◽  
pp. 2242-2256 ◽  
Author(s):  
T. Jiang ◽  
D. E. Ellis

Theoretical studies have been made of K-edge x-ray absorption near edge structure (XANES) of Co in CoO, Co(OH)2, CoTiO3, Co3O4, and CoAl2O4. Correlations of experimental near edge features with site symmetry, local geometry, local electronic structure, i.e., atomic configuration, charge transfer, and backscattering from neighboring atomic potentials are interpreted. The self-consistent Discrete Variational Xa Method (DV-Xα) within an embedded cluster technique has been used to generate the crystal potential. A multiple scattering (MS) approach is then used to solve for the final state wave function. The ground state DV wave functions are analyzed in terms of the projected density of states, whereas the final state MS continuum wave functions are analyzed through the concept of photoelectron trapping time.


1999 ◽  
Vol 59 (3) ◽  
pp. 1571-1574 ◽  
Author(s):  
Chenxi Li ◽  
Kunquan Lu ◽  
Yuren Wang ◽  
Kozaburo Tamura ◽  
Shinya Hosokawa ◽  
...  

2006 ◽  
Vol 6 (11) ◽  
pp. 3422-3425
Author(s):  
Veeramuthu Vaithianathan ◽  
Jong Ha Moon ◽  
Chang-Hwan Chang ◽  
Kandasami Asokan ◽  
Sang Sub Kim

The electronic structure of laser-deposited P-doped ZnO films was investigated by X-ray absorption near-edge structure spectroscopy (XANES) at the O K-, Zn K-, and Zn L3-edges. While the O K-edge XANES spectrum of the n-type P-doped ZnO demonstrates that the density of unoccupied states, primarily O 2p–P 3sp hybridized states, is significantly high, the O K-edge XANES spectrum of the p-type P-doped ZnO shows a sharp decrease in intensity of the corresponding feature indicating that P replaces O sites in the ZnO lattice, and thereby generating PO. This produces holes to maintain charge neutrality that are responsible for the p-type behavior of P-doped ZnO. Both the Zn K-, and Zn L3-edge XANES spectra of the P-doped ZnO reveal that Zn plays no significant role in the p-type behavior of ZnO:P.


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