State filling and time-resolved photoluminescence of excited states inInxGa1−xAs/GaAs self-assembled quantum dots

1996 ◽  
Vol 54 (16) ◽  
pp. 11548-11554 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
P. J. Poole ◽  
A. Wojs ◽  
P. Hawrylak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence ◽  
State Filling

scholarly journals Time-resolved photoluminescence spectra of self-assembled InAs/GaAs quantum dots

2006 ◽  
Vol 498 (1-2) ◽  
pp. 188-192 ◽  
Author(s):  
Ling Min Kong ◽  
Jia Fa Cai ◽  
Zheng Yun Wu ◽  
Zheng Gong ◽  
Zhi Chuan Niu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Spectra ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation

2000 ◽  
Vol 76 (1) ◽  
pp. 76-78 ◽  
Author(s):  
M. Paillard ◽  
X. Marie ◽  
E. Vanelle ◽  
T. Amand ◽  
V. K. Kalevich ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Resonant Excitation ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence

State-filling and magneto-photoluminescence of excited states in InGaAs/GaAs self-assembled quantum dots

1997 ◽  
Vol 21 (4) ◽  
pp. 541-558 ◽  
Author(s):  
S. Raymond ◽  
S. Fafard ◽  
P.J. Poole ◽  
A. Wojs ◽  
P. Hawrylak ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Self Assembled ◽  
State Filling

Probing CdSe/ZnSe self-assembled quantum dots by cw and time-resolved photoluminescence

2001 ◽  
Vol 11 (2-3) ◽  
pp. 59-62 ◽  
Author(s):  
H. Rho ◽  
L.M. Robinson ◽  
N. Mukolobwiez ◽  
L.M. Smith ◽  
H.E. Jackson ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence

Controlling Growth of InAs/GaAs Self-Assembled Quantum Dots to Give 1.3 μm Room Temperature Emission

1999 ◽  
Vol 571 ◽  
Author(s):  
Surama Malik ◽  
Philip Siverns ◽  
David Childs ◽  
Christine Roberts ◽  
Jean-Michel Hartmann ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Room Temperature ◽  
Growth Parameters ◽  
High Growth ◽  
Growth Conditions ◽  
Time Resolved ◽  
Confining Potential ◽  
Decay Times ◽  
Self Assembled

ABSTRACTWe have investigated the extent to which the emission wavelength of self-assembled InAs/GaAs quantum dots can be controlled by growth parameters using conventional solid source MBE. Changing from conventionally high growth rates to a very low growth rate (LGR) and a relatively high substrate temperature, tunes the photoluminescence (PL) emission from 1.1 μm to 1.3 μm at room temperature. Atomic force micrographs obtained from uncapped samples reveal that these LGRQDs are larger, lower in density and extremely uniform in size. The improved size uniformity is reflected in the reduction of the PL linewidth from 78 meV to 22 meV. Under conditions of high excitation, emission from the ground and two excited states each separated by ∼70 meV is observed. This implies a parabolic confining potential. Time resolved photoluminescence (TRPL) measurements of dots grown under the various growth conditions yield radiative lifetimes which reflect the depth of the confining potential. A comparison of the decay times measured for the excited states show that the relaxation of carriers within the dots cannot be ascribed to phonon effects.

Time-resolved Photoluminescence and Carrier Dynamics in Vertically-coupled Self-assembled Quantum Dots

1999 ◽  
Vol 38 (Part 1, No. 2A) ◽  
pp. 674-680 ◽  
Author(s):  
I. Gontijo ◽  
G. S. Buller ◽  
J. S. Massa ◽  
A. C. Walker ◽  
S. V. Zaitsev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Self Assembled ◽  
Time Resolved Photoluminescence

Time-resolved photoluminescence in annealed self-assembled InAs quantum dots

2006 ◽  
Vol 3 (12) ◽  
pp. 4299-4302
Author(s):  
H. Nishida ◽  
S. Kayamori ◽  
H. Sasakura ◽  
S. Adachi ◽  
S. Muto ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Resolved ◽  
Inas Quantum Dots ◽  
Self Assembled ◽  
Time Resolved Photoluminescence
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