Tunneling magnetoresistance spectroscopy: Temperature dependent spin-polarized band structure inCu38Ni62

ABSTRACTThe pressure filling of anodic alumina templates with molten bismuth has been used to synthesize single crystalline bismuth nanowires with diameters ranging from 7 to 200nm and lengths of 50μm. The nanowires are separated by dissolving the template, and electrodes are affixed to single Bi nanowires on Si substrates. A focused ion beam (FIB) technique is used first to sputter off the oxide from the nanowires with a Ga ion beam and then to deposit Pt without breaking vacuum. The resistivity of a 200nm diameter Bi nanowire is found to be only slightly greater than the bulk value, while preliminary measurements indicate that the resistivity of a 100nm diameter nanowire is significantly larger than bulk. The temperature dependence of the resistivity of a 100nm nanowire is modeled by considering the temperature dependent band parameters and the quantized band structure of the nanowires. This theoretical model is consistent with the experimental results.

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Spin-Polarized Splittings in the Temperature-Dependent Reflectance of EuO

Physical Review Letters ◽

10.1103/physrevlett.22.1385 ◽

1969 ◽

Vol 22 (25) ◽

pp. 1385-1388 ◽

Cited By ~ 57

Author(s):

J. Feinleib ◽

W. J. Scouler ◽

J. O. Dimmock ◽

J. Hanus ◽

T. B. Reed ◽

...

Keyword(s):

Temperature Dependent ◽

Spin Polarized

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Temperature-dependent quasiparticle band structure of an antiferromagnetic two-layer EuTe film

Physica B Condensed Matter ◽

10.1016/s0921-4526(03)00315-6 ◽

2003 ◽

Vol 336 (3-4) ◽

pp. 379-386

Author(s):

Satadeep Bhattacharjee ◽

S. Mathi Jaya

Keyword(s):

Band Structure ◽

Temperature Dependent ◽

Quasiparticle Band

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Spin Polarized Low Energy Electron Microscopy (Spleem) of Single and Combined Layers of Co, Cu, and Pd on W (110)

MRS Proceedings ◽

10.1557/proc-313-219 ◽

1993 ◽

Vol 313 ◽

Cited By ~ 9

Author(s):

Helmut Poppa ◽

Heiko Pinkvos ◽

Karsten Wurm ◽

Ernst Bauer

Keyword(s):

Electron Microscopy ◽

Band Structure ◽

Film Growth ◽

Magnetic Domain ◽

Low Energy ◽

Energy Electron ◽

Magnetic Studies ◽

Deposition Rates ◽

Spin Polarized ◽

Low Energy Electron

ABSTRACTIn-situ recording of ultra-thin film growth by Low Energy Electron Microscopy (LEEM) results in accurate determinations of monolayer metal deposition rates for difficult to calibrate deposition geometries. Deposition rates and growth features were determined for Cu and Co on W (110) allowing for thickness control at the submonolayer level. Also, the transparencies of non-Magnetic overlayers of Pd (111) and Cu (111) to very low energy spin polarized electrons were compared and qualitatively explained by band structure considerations. Cu (111) is much more transparent than Pd (111) so that magnetic domain structures can be observed through at least 4 nmof Cu (111). This suggests the use of Cu (111) and other metals of suitable band structure as protective layers for surface magnetic studies.

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Spin Polarized Transport in an AC-Driven Quantum Curved Nanowire

Physics Research International ◽

10.1155/2011/505091 ◽

2011 ◽

Vol 2011 ◽

pp. 1-5 ◽

Cited By ~ 2

Author(s):

Walid A. Zein ◽

Nabil A. Ibrahim ◽

Adel H. Phillips

Keyword(s):

Spin Polarization ◽

Small Strain ◽

Oscillatory Behavior ◽

Tunneling Magnetoresistance ◽

Mass Approximation ◽

Wide Range ◽

Spin Polarized ◽

Polarized Transport ◽

The One ◽

Spin Polarized Transport

Using the effective-mass approximation method, and Floquet theory, we study the spin transport characteristics through a curved quantum nanowire. The spin polarization, P, and the tunneling magnetoresistance, TMR, are deduced under the effect of microwave and infrared radiations of wide range of frequencies. The results show an oscillatory behavior of both the spin polarization and the tunneling magnetoresistance. This is due to Fano-type resonance and the interplay between the strength of spin-orbit coupling and the photons in the subbands of the one-dimensional nanowire. The present results show that this investigation is very important, and the present device might be used to be a sensor for small strain in semiconductor nanostructures and photodetector.

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