Spin Polarized Transport in an AC-Driven Quantum Curved Nanowire

Using the effective-mass approximation method, and Floquet theory, we study the spin transport characteristics through a curved quantum nanowire. The spin polarization, P, and the tunneling magnetoresistance, TMR, are deduced under the effect of microwave and infrared radiations of wide range of frequencies. The results show an oscillatory behavior of both the spin polarization and the tunneling magnetoresistance. This is due to Fano-type resonance and the interplay between the strength of spin-orbit coupling and the photons in the subbands of the one-dimensional nanowire. The present results show that this investigation is very important, and the present device might be used to be a sensor for small strain in semiconductor nanostructures and photodetector.

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Spin Polarized Transport through Structures Consist of the Ferromagnetic Semiconductor in Presence of a Inhomogeneous Magnetic Field

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.194-196.679 ◽

2011 ◽

Vol 194-196 ◽

pp. 679-682

Author(s):

Zahra Bamshad

Keyword(s):

Magnetic Field ◽

Spin Polarization ◽

Fermi Energy ◽

Magnetic Tunnel Junction ◽

Inhomogeneous Magnetic Field ◽

Spin Polarized ◽

Polarized Transport ◽

Dimensional Electron Gas ◽

Spin Electronic ◽

Spin Polarized Transport

The spin-polarized transport is investigated in a magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer placed in distance above the two dimensional electron gas (2DEG) in presence of an inhomogeneous external modulated magnetic field and a perpendicular wave vector dependent effective potential. Based on the transfer matrix method and the nearly-free-electron approximation the dependence of the conductance and spin polarization on the Fermi energy of the electrons are studied theoretically the. strong oscillations with large amplitude investigated in spin polarization in terms of the Fermi energy due to the inhomogeneous magnetic field. The conductance in terms of the Fermi energy shows no oscillation in low energy but has a strong pick in middle region. this results may be useful for the development of spin electronic devices based on coherent transport, or may be used as a tunable spin-filter.

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Global smooth solutions for the one-dimensional spin-polarized transport equation

Nonlinear Analysis ◽

10.1016/j.na.2009.08.032 ◽

2010 ◽

Vol 72 (3-4) ◽

pp. 1481-1487 ◽

Cited By ~ 5

Author(s):

Xueke Pu ◽

Boling Guo

Keyword(s):

Transport Equation ◽

Smooth Solutions ◽

One Dimensional ◽

Global Smooth Solutions ◽

Spin Polarized ◽

Polarized Transport ◽

The One ◽

Spin Polarized Transport

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SPIN-POLARIZED TRANSPORT THROUGH GaAs/AlGaAs PARABOLIC QUANTUM WELL UNDER A UNIFORM MAGNETIC FIELD

International Journal of Nanoscience ◽

10.1142/s0219581x09005736 ◽

2009 ◽

Vol 08 (01n02) ◽

pp. 71-74 ◽

Cited By ~ 3

Author(s):

F. WAN ◽

M. B. A. JALIL ◽

S. G. TAN ◽

T. FUJITA

Keyword(s):

Quantum Well ◽

Spin Polarization ◽

Uniform Magnetic Field ◽

High Electron ◽

Practical Applications ◽

Electron Transmission ◽

Spin Polarized ◽

High Spin Polarization ◽

Polarized Transport ◽

Spin Polarized Transport

We present a GaAs / AlGaAs -based quantum well device capable of achieving an appreciable spin polarization coupled with high electron transmission. Our numerical results indicate that the device is able to achieve a high spin polarization without the need for less commonly used materials with high g-factors required by previously proposed semiconductor-based systems. The electron transmission and spin polarization amplitude of our structure is found to be robust to the length of the parabolic well, which could ease the fabrication of such structures in practical applications.

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Spin-polarized transport in graphene nanoribbons with Rashba spin–orbit interaction: the effects of spatial symmetry

Physical Chemistry Chemical Physics ◽

10.1039/c6cp06972j ◽

2017 ◽

Vol 19 (9) ◽

pp. 6871-6877 ◽

Cited By ~ 10

Author(s):

Qingtian Zhang ◽

K. S. Chan ◽

Jingbo Li

Keyword(s):

Spin Polarization ◽

Graphene Nanoribbons ◽

Orbit Interaction ◽

Spin Orbit ◽

Spin Orbit Interaction ◽

Spatial Symmetry ◽

Rashba Spin ◽

Spin Polarized ◽

Polarized Transport ◽

Spin Polarized Transport

The spin polarization can be largely enhanced by breaking the spatial symmetries of ideal graphene nanoribbons with Rashba SOI.

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TUNNELING MAGNETORESISTANCE IN FERROMAGNETIC SEMICONDUCTOR TUNNEL JUNCTIONS

International Journal of Modern Physics B ◽

10.1142/s021797920402607x ◽

2004 ◽

Vol 18 (16) ◽

pp. 2247-2256 ◽

Cited By ~ 3

Author(s):

Y. C. TAO ◽

J. G. HU

Keyword(s):

Tunnel Junctions ◽

Hole Concentration ◽

Great Influence ◽

Tunneling Magnetoresistance ◽

Ferromagnetic Semiconductors ◽

Hamiltonian Approach ◽

Spin Polarized ◽

Basic Physics ◽

Polarized Transport ◽

Spin Polarized Transport

Taking into account the basic physics of diluted ferromagnetic semiconductors (DMS), we use the tunneling Hamiltonian approach to studying the spin-polarized transport in GaMnAs / AlAs / GaMnAs DMS tunnel junctions. It is found that the splitting, Fermi energies, and the hole concentration for a fixed Mn impurity density vary with temperature, which exert a great influence on the spin-polarized transport of the DMS. We have also shown that there exists a spin-flip tunneling process arising from the impurity Mn scattering in the barrier, and the variation of normalized conductance difference ΔG with temperature is consistent with that of experiment.

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