Interband Transitions in GaInNAs/GaAs Single Quantum Wells

2002 ◽  
Vol 744 ◽  
Author(s):  
M. O. Manasreh ◽  
D. J. Friedman ◽  
W. Q. Ma ◽  
C. L. Workman ◽  
C. E. George ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Mole Fraction ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Peak Position ◽  
Interband Transitions ◽  
Single Quantum ◽  
Pl Spectra ◽  
Vapor Deposition Technique ◽  
Pl Intensity

ABSTRACTPhotoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition technique on semi-insulating GaAs substrates were measured at 77 K for several samples grown with different In composition and dimethylhydrazine (DMH)/III ratios. The results show that the PL intensity increases as the In mole fraction is increased from 0 to 25%, but the PL intensity is degraded for samples with an In mole fraction of 30% or higher. The peak position energies of the PL spectra were investigated as a function of the DMH/III ratio. Thermal annealing effect induced a blue-shift in the PL spectra peak position energy in samples grown with high DMH/III ratio.

Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells

2002 ◽  
Vol 743 ◽  
Author(s):  
E. Kuokstis ◽  
C. Q. Chen ◽  
M. E. Gaevski ◽  
W. H. Sun ◽  
J. W. Yang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Chemical Vapor ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Subsequent Increase ◽  
Vapor Deposition Technique ◽  
Strong Excitation ◽  
Pl Intensity ◽  
The Comparative Study

ABSTRACTThe comparative study of photoluminescence (PL) dynamics of wurtzite-type GaN/AlGaN multiple quantum wells (MQWs) fabricated using low-pressure metalorganic chemical vapor deposition technique over GaN coated [0001]-sapphire (C-plane) and single crystalline [1100]-oriented freestanding GaN (M-plane) substrates is presented. The MQWs on C-plane sapphire at low excitation exhibited much lower (∼30 times) PL intensity in comparison with M-plane samples. The C-plane MQWs showed a strong excitation intensity-induced PL spectrum line blueshift (up to 140 meV). Meanwhile identical MQW structures on M-plane substrates demonstrated no PL peak shifts indicating an absence of polarization fields. At higher excitation (>50 kW/cm2) the PL intensity and spectra peak positions for both the C- and the M-plane MQWs become nearly the same and do not differ with subsequent increase of pumping. Theoretical analysis and comparison with PL experimental data revealed strong (up to ∼1.2–1.3 MV/cm) built-in electrostatic fields in the C-plane structures whereas M-plane structures are almost non-polar.

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transitions ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy

Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells

2011 ◽  
Vol 480-481 ◽  
pp. 629-633
Author(s):  
Wen Teng Chang ◽  
Yu Ting Chen ◽  
Chung Chin Kuo
Keyword(s):  
Silicon Carbide ◽  
Quantum Wells ◽  
Quantum Confinement Effect ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Plasma Chemical ◽  
Hydrogenated Silicon ◽  
Plasma Chemical Vapor Deposition

Five-period hydrogenated silicon carbide (SiC) multiple quantum wells with silicon dioxide (SiO2) or silicon nitride (SiN) dielectric that were synthesized by high density plasma chemical vapor deposition were studied using photoluminescence (PL) spectroscopy to understand its blue shift. Rapid thermal annealing induced significant blue shifting in the PL spectra after fluorine ion implantation due to crystallization. The thinning of the SiC causes blue shift due to the quantum confinement effect. The higher PL intensity of the amorphous SiC:H in SiO2 than in SiC/SiN may be attributed to the high number of non-radiative sites on its surface. Annealing with nitrogen may cause impurities in SiC/SiO2, thereby broadening the PL peak.

1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices

2006 ◽  
Vol 955 ◽  
Author(s):  
Eric Anthony DeCuir ◽  
Emil Fred ◽  
Omar Manasreh ◽  
Jinqiao Xie ◽  
Hadis Morkoc ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Bound States ◽  
Energy Levels ◽  
Three Dimensional ◽  
Blue Shift ◽  
Bound State ◽  
Peak Position ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Photovoltaic Mode

ABSTRACTIntersubband transitions in the spectral range of 1.37-2.90 °Cm is observed in molecular beam epitaxy grown Si-doped GaN/AlN multiple quantum wells using a Fourier-transform spectroscopy technique. A blue shift in the peak position of the intersubband transition is observed as the well width is decreased. A sample with a well width in the order of 2.4 nm exhibited the presence of three bound states in the GaN well. The bound state energy levels are calculated using a transfer matrix method. An electrochemical capacitance voltage technique is used to obtain the three dimensional carrier concentrations in these samples which further enable the calculation of the Fermi energy level position. Devices fabricated from these GaN/AlN quantum wells are found to operate in the photovoltaic mode.

Metal Organic Chemical Vapor Deposition Growth of GaN and GaMnN Multifunctional Nanostructures

2005 ◽  
Vol 901 ◽  
Author(s):  
Shalini Gupta ◽  
Hun Kang ◽  
Matthew Kane ◽  
William E Fenwick ◽  
Nola Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Nitrogen Atmosphere ◽  
Organic Chemical ◽  
Chemical Vapor Deposition Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractQuantum dots (QDs) have been shown to improve the efficiency and optical properties of opto- electronic devices compared to two dimensional quantum wells in the active region. The formation of self-assembled GaN nanostructures on aluminum nitride (AlN) grown on sapphire substrates by Metal Organic Chemical Vapor deposition (MOCVD) was explored. This paper reports on the effect ofin-situactivation in nitrogen atmosphere on MOCVD grown GaN nanostructures. The effect of introducing manganese in these nanostructures was also studied. Optically active nanostructures were successfully obtained. A blue shift is observed in the photoluminescence data with a decrease in nanostructure size.

GaN Three Dimensional Nanostructures

1995 ◽  
Vol 395 ◽  
Author(s):  
V. Dmitriev ◽  
K. Irvine ◽  
A. Zubrilov ◽  
D. Tsvetkov ◽  
V. Nikolaev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Blue Shift ◽  
High Energy ◽  
Peak Position ◽  
Organic Chemical ◽  
Nanoscale Structures ◽  
Dot Density ◽  
20 Nm

ABSTRACTWe report on the growth and characterization of three dimensional nanoscale structures of GaN. GaN dots were grown by metal organic chemical vapor deposition (MOCVD) on 6H-SiC substrates. The actual size of the dots measured by scanning electron microscopy (SEM) and transmission electron microscopy (TEM) ranged from ∼20 nm to more than 2 μm. The average dot density ranged from 107 to 109 cm−2. The single crystal structure of the dots was verified by reflectance high energy electron diffraction (HEED) and TEM. Cathodoluminescence (CL) and photoluminescence (PL) of the dots were studied at various temperatures and excitation levels. The PL and CL edge peak for the GaN dots exhibited a blue shift as compared with edge peak position for continuous GaN layers grown on SiC.

Emission at 247 nm from GaN Quantum Wells Grown by MOCVD

1999 ◽  
Vol 595 ◽  
Author(s):  
Takao Someya ◽  
Katsuyuki Hoshino ◽  
Janet C. Harris ◽  
Koichi Tachibana ◽  
Satoshi Kako ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Pl Spectra ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractPhotoluminescence (PL) spectra were measured at room temperature for GaN quantum wells (QWs) with Al0.8Ga0.2N barriers, which were grown by atmospheric-pressure metal organic chemical vapor deposition (MOCVD). The thickness of the GaN QW layers was systematically varied from one monolayer to four monolayers. We clearly observed a PL peak at a wavelength as short as 247 nm (5.03 eV) from one monolayer-thick QWs. The effective confinement energy is as large as 1.63 eV.

Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells

2003 ◽  
Vol 82 (4) ◽  
pp. 514-516 ◽  
Author(s):  
M. O. Manasreh ◽  
D. J. Friedman ◽  
W. Q. Ma ◽  
C. L. Workman ◽  
C. E. George ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Single Quantum ◽  
Metalorganic Chemical
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