Effect of antiferromagnetic layers on the spin-dependent transport in magnetic tunnel junctions

2006 ◽  
Vol 74 (5) ◽  
Author(s):  
U. Schlickum ◽  
C. L. Gao ◽  
W. Wulfhekel ◽  
J. Henk ◽  
P. Bruno ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Dependent Transport ◽  
Dependent Transport

scholarly journals Spin-Dependent Transport in van der Waals Magnetic Tunnel Junctions with Fe3GeTe2 Electrodes

Nano Letters ◽  
2019 ◽  
Vol 19 (8) ◽  
pp. 5133-5139 ◽  
Author(s):  
Xinlu Li ◽  
Jing-Tao Lü ◽  
Jia Zhang ◽  
Long You ◽  
Yurong Su ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Van Der Waals ◽  
Magnetic Tunnel Junctions ◽  
Spin Dependent Transport ◽  
Dependent Transport

Tunneling magnetoresistance and light modulation in Fe4N(La2/3Sr1/3MnO3)/C60/Fe4N single molecule magnetic tunnel junctions

2020 ◽  
Vol 8 (9) ◽  
pp. 3137-3146 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Dunhui Wang
Keyword(s):  
Transport Properties ◽  
Single Molecule ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Light Modulation ◽  
Spin Dependent Transport ◽  
Dependent Transport

Spin-dependent transport properties and light modulation of Fe4N/C60/Fe4N and LSMO/C60/Fe4N single molecule magnetic tunnel junctions.

scholarly journals Spin-dependent transport in metal/semiconductor tunnel junctions

1995 ◽  
Vol 7 (49) ◽  
pp. 9447-9464 ◽  
Author(s):  
M W J Prins ◽  
H van Kempen ◽  
H van Leuken ◽  
R A de Groot ◽  
W Van Roy ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Spin Dependent Transport ◽  
Dependent Transport

EFFECTS OF THE MIXED Cu/O LAYER ON THE TRANSPORT PROPERTIES OF Cu/EuO-BASED TUNNEL JUNCTIONS

2017 ◽  
Vol 24 (08) ◽  
pp. 1750120 ◽  
Author(s):  
C. J. DAI ◽  
X. H. YAN ◽  
Y. XIAO ◽  
J. R. YUAN ◽  
M. X. BI ◽  
...  
Keyword(s):  
Transport Properties ◽  
Tunnel Junctions ◽  
Spintronic Devices ◽  
Valance Band Maximum ◽  
Spin Dependent Transport ◽  
Filtering Effect ◽  
Dependent Transport ◽  
Non Equilibrium Green’S Function ◽  
The Eu ◽  
Majority Spin

The spin-dependent transport properties of Cu/EuO-based tunnel junctions are investigated by means of the first-principle calculations combined with the non-equilibrium Green’s function (NEGF) method. It is found that the Cu/EuO-based junctions exhibit excellent spin-filtering effect. Furthermore, the mixed Cu/O layer enhances the tunneling of the majority spin through the EuO barrier for the junctions with Cu/O layers due to the fact that the valance-band maximum of the Eu-4[Formula: see text] states shifts to high energies with respect to the Fermi level for these junctions. These results permit the existence of the mixed Cu/O layer in Cu/EuO-based tunnel junctions and promote future applications of these tunnel junctions in spintronic devices.

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