valance band maximum
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Catalysts ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 940
Author(s):  
Joseph Simfukwe ◽  
Refilwe Edwin Mapasha ◽  
Artur Braun ◽  
Mmantsae Diale

First-principles calculations based on density functional theory (DFT) were carried out to study the energetic stability and electronic properties of a bimetallic-doped α-Fe2O3 photoanode surface with (Zn, Ti) and (Zn, Zr) pairs for enhanced PEC water splitting. The doped systems showed negative formation energies under both O-rich and Fe-rich conditions which make them thermodynamically stable and possible to be synthesised. It is found that in a bimetallic (Zn, Ti)-doped system, at a doping concentration of 4.20% of Ti, the bandgap decreases from 2.1 eV to 1.80 eV without the formation of impurity states in the bandgap. This is favourable for increased photon absorption and efficient movement of charges from the valance band maximum (VBM) to the conduction band minimum (CBM). In addition, the CBM becomes wavy and delocalised, suggesting a decrease in the charge carrier mass, enabling electron–holes to successfully diffuse to the surface, where they are needed for water oxidation. Interestingly, with single doping of Zr at the third layer (L3) of Fe atoms of the {0001} α-Fe2O3 surface, impurity levels do not appear in the bandgap, at both concentrations of 2.10% and 4.20%. Furthermore, at 2.10% doping concentration of α-Fe2O3 with Zr, CBM becomes delocalised, suggesting improved carrier mobility, while the bandgap is altered from 2.1 eV to 1.73 eV, allowing more light absorption in the visible region. Moreover, the photocatalytic activities of Zr-doped hematite could be improved further by codoping it with Zn because Zr is capable of increasing the conductivity of hematite by the substitution of Fe3+ with Zr4+, while Zn can foster the surface reaction and reduce quick recombination of the electron–hole pairs.


Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 547
Author(s):  
Zengguang Tang ◽  
Liujiang Zhang ◽  
Zhenhuang Su ◽  
Zhen Wang ◽  
Li Chen ◽  
...  

In this article, CsPbI2Br perovskite thin films were spin-coated on FTO, on which CuPc was deposited by thermal evaporation. The electronic structure at the CsPbI2Br/CuPc interface was examined during the CuPc deposition by in situ X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurements. No downward band bending was resolved at the CsPbI2Br side, whereas there is ~0.23 eV upward band bending as well as a dipole of ~0.08 eV identified at the molecular side. Although the hole injection barrier as indicated by the energy gap from CsPbI2Br valance band maximum (VBM) to CuPc highest occupied molecular orbital (HOMO) was estimated to be ~0.26 eV, favoring hole extraction from CsPbI2Br to CuPc, the electron blocking barrier of ~0.04 eV as indicated by the offset between CsPbI2Br conduction band minimum (CBM) and CuPc lowest unoccupied molecular orbital (LUMO) is too small to efficiently block electron transfer. Therefore, the present experimental study implies that CuPc may not be a promising hole transport material for high-performance solar cells using CsPbI2Br as active layer.


Nanoscale ◽  
2021 ◽  
Author(s):  
Dan-Dong Wang ◽  
Xin-Gao Gong ◽  
Jihui Yang

Interlayer interactions play important roles in manipulating the electronic properties of layered semiconductors. One common mechanism is that the valance band maximum (VBM) and the conduction band minimum (CBM) in...


2018 ◽  
Vol 307 ◽  
pp. 147-153 ◽  
Author(s):  
Jiadong Xiao ◽  
Yongbing Xie ◽  
Chuanhao Li ◽  
Jae-Hong Kim ◽  
Kexin Tang ◽  
...  

2017 ◽  
Vol 24 (08) ◽  
pp. 1750120 ◽  
Author(s):  
C. J. DAI ◽  
X. H. YAN ◽  
Y. XIAO ◽  
J. R. YUAN ◽  
M. X. BI ◽  
...  

The spin-dependent transport properties of Cu/EuO-based tunnel junctions are investigated by means of the first-principle calculations combined with the non-equilibrium Green’s function (NEGF) method. It is found that the Cu/EuO-based junctions exhibit excellent spin-filtering effect. Furthermore, the mixed Cu/O layer enhances the tunneling of the majority spin through the EuO barrier for the junctions with Cu/O layers due to the fact that the valance-band maximum of the Eu-4[Formula: see text] states shifts to high energies with respect to the Fermi level for these junctions. These results permit the existence of the mixed Cu/O layer in Cu/EuO-based tunnel junctions and promote future applications of these tunnel junctions in spintronic devices.


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