scholarly journals Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition

2007 ◽  
Vol 76 (8) ◽  
Author(s):  
Byungha Shin ◽  
Michael J. Aziz
Keyword(s):  
Kinetic Energy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Kinetic energy and mass distribution of ablated species formed during pulsed laser deposition

1994 ◽  
Vol 25 (2-4) ◽  
pp. 247-252 ◽  
Author(s):  
G.C. Tyrrell ◽  
T. York ◽  
N. Cherief ◽  
D. Givord ◽  
J.G. Lunney ◽  
...  
Keyword(s):  
Kinetic Energy ◽  
Pulsed Laser Deposition ◽  
Mass Distribution ◽  
Pulsed Laser ◽  
Laser Deposition

Pulsed Laser Deposition of Diamond-Like Carbon Thin Films: Ablation Dynamics and Growth

1996 ◽  
Vol 438 ◽  
Author(s):  
Peidong Yang ◽  
Z. John Zhang ◽  
Jiangtao Hu ◽  
Charles M. Lieber
Keyword(s):  
Thin Films ◽  
Kinetic Energy ◽  
Pulsed Laser Deposition ◽  
Power Density ◽  
Laser Power ◽  
Large Fraction ◽  
Pulsed Laser ◽  
Laser Power Density ◽  
Laser Deposition ◽  
Diamond Like Carbon

AbstractThin films of diamond-like carbon have been grown by pulsed laser deposition using a Nd:YAG laser at 532 nm. Time-of-flight mass spectroscopy was used to investigate the effects of laser power density and background gas pressure on the plume characteristics including the species in the plume and the kinetic energy distribution of each species. We found that with increasing laser power density (1) the relative amount of C+ ions increases, (2) the kinetic energy distributions of C+ get broader and can be deconvoluted into fast and slow components, and (3) the kinetic energy of the fast component of C+ ions increases from several to 40 eV. The resistivity and the local carbon bonding in films grown under these same conditions were also characterized. It was found that there is direct correlation between the characteristics of fast part of C+ ions in the plume and the diamond-like properties of the thin films. Under optimal growth conditions diamond-like carbon films with a large fraction of sp3 bonding can be prepared, although the maximum fraction appears to saturate at 70%. The implications of these results are discussed.

Nanostructured Gold Thin Films Prepared by Pulsed Laser Deposition

2004 ◽  
Vol 19 (3) ◽  
pp. 950-958 ◽  
Author(s):  
Eric Irissou ◽  
Boris Le Drogoff ◽  
Mohammed Chaker ◽  
Michel Trudeau ◽  
Daniel Guay
Keyword(s):  
Thin Films ◽  
Kinetic Energy ◽  
Pulsed Laser Deposition ◽  
Crystallite Size ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Nanostructured Gold ◽  
The Mean ◽  
Gold Thin Films ◽  
Background Gas

A structural and morphological study of nanostructured gold thin films prepared by pulsed laser deposition in the presence of several inert background gases (Ar, He, and N2) and at various pressures (from 10 mTorr to 1 Torr) and target-to-substrate distances (from 1 to 10 cm) is presented. Structural and morphological analyses were undertaken using semiquantitative x-ray diffraction, scanning tunneling microscopy, and transmission electron microscopy. For each set of deposition conditions, the kinetic energy of the neutral gold species [Au(I)] present in the plasma plume was determined by time-of-flight emission spectroscopy and used to characterize the plasma dynamics. It is shown that all films exhibit a transition from highly [111] oriented to polycrystalline as the Au(I) kinetic energy decreases. The polycrystalline phase ratio is close to 0% for Au(I) kinetic energy larger than approximately 3.0 eV/atom and approximately 86 ± 10% for Au(I) kinetic energy smaller than approximately 0.30 eV/atom, irrespective of the background gas atmosphere. The mean crystallite size of both phases and the mean roughness of the films also follow a unique relation with the Au(I) kinetic energy, independently of the nature of the background gas, and nanocrystalline films with crystallite size as small as 12 nm are obtained for Au(I) kinetic energy smaller than 0.3 eV/atom.

Influence of kinetic energy and substrate temperature on thin film growth in pulsed laser deposition

2006 ◽  
Vol 200 (12-13) ◽  
pp. 4027-4031 ◽  
Author(s):  
D.M. Zhang ◽  
L. Guan ◽  
Z.H. Li ◽  
G.J. Pan ◽  
H.Z. Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Kinetic Energy ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Film Growth ◽  
Pulsed Laser ◽  
Thin Film Growth ◽  
Laser Deposition

Advanced Properties of Silicon Oxynitride (SiOxNy) Thin Films Prepared by Pulsed Laser Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
R.-F. Xiao ◽  
L.C. Ng ◽  
H.B. Liao
Keyword(s):  
Thin Films ◽  
Kinetic Energy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Silicon Oxynitride ◽  
Laser Deposition ◽  
Chemical Solution ◽  
Conventional Chemical Vapor Deposition

AbstractA pulsed laser deposition technique has been used to grow silicon oxynitride (SiOxNy) thin films at low deposition temperatures (25°C - 300°C). the thin films were found to be quite smooth in surface morphology, extremely inert in chemical solution and highly transparent in the optical range of 0.3 μm to 5 μm. the refractive index was tunable between 1.4 - 2.1 by the addition of oxygen in substitution of nitrogen in the film, and the dielectric constant is much larger than the similar films grown by conventional chemical vapor deposition. the high quality of the SiOxNy films deposited at such low temperatures was resulted from the large kinetic energy carried by the impinging particles created by the ablation of a high-power pulsed excimer laser. the kinetic energy of the impinged particles on the substrate provides thermal energy for surface diffusion and relaxation.

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