Infrared single-photon detection by two-photon absorption in silicon

Optical Beam Induced Current (OBIC) measurements are performed on 4H-SiC avalanche diodes with a very thin and a highly doped active region. A pulsed green laser, with a wavelength of 532 nm, illuminates a reverse biased diode leading to generate electron-hole pairs in the space charge region. Comparison between the 4H-SiC bandgap and the incident photon energy shows that single photon absorption process can be neglected and two-photon absorption process dominates in this case. Ionization rates are then extracted from multiplication curve in a high electric field range (3 to 5 MV.cm–1). Results are in good agreement with previous ones obtained on the same diodes using single photon absorption process.

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Transient and steady-state behavior of single and two-photon absorption by microwave driven field

Canadian Journal of Physics ◽

10.1139/cjp-2013-0480 ◽

2014 ◽

Vol 92 (4) ◽

pp. 284-288

Author(s):

Seyyed Hossein Asadpour ◽

H. Rahimpour Soleimani

Keyword(s):

Steady State ◽

Microwave Field ◽

Single Photon ◽

Photon Absorption ◽

State Behavior ◽

Two Photon Absorption ◽

Two Photon ◽

Probe Gain ◽

The One ◽

Transient And Steady State

In this paper, the effect of microwave field on the transient and steady state response of the four-level inverted Y-type atomic system is investigated. It is found that the properties of transient and steady processes can be affected by microwave field. It is found that the absorption spectrum behaves differentially for single-photon absorption and two-photon absorption. Also it is observed that in the one-photon absorption, the microwave field can lead to the probe gain and for two-photon absorption case, the strong microwave can enhance the absorption.

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Determination of the contributions of degenerate and non-degenerate two-photon absorption response in silicon avalanche photodiode for infrared photon detection

10.21203/rs.3.rs-18288/v1 ◽

2020 ◽

Author(s):

Guangjian Xu ◽

Xinyi Ren ◽

Qucheng Miao ◽

Ming Yan ◽

Haifeng Pan ◽

...

Keyword(s):

Detection Efficiency ◽

Laser Pulses ◽

Avalanche Photodiode ◽

Photon Absorption ◽

Photon Detection ◽

Two Photon Absorption ◽

Two Photon ◽

Pulse Photon ◽

Quantum Detection ◽

Infrared Photon

Abstract The study of non-linear interactions in semiconductor photo-electronic devices to achieve effective and fast photon identification is an ongoing and important task. We investigated the specific contribution of degenerate and non-degenerate two-photon absorption (D-TPA and ND-TPA) response in silicon avalanche photodiode (Si-APD) for infrared photon detection at room temperature. We experimentally demonstrated that when the two laser pulses overlapped, the average D-TPA quantum detection efficiencies at 1800 nm, and that at 1550 nm were measured as 3.3×10 -16 counts•pulse/photon 2 , 4.3×10 -15 counts•pulse/photon 2 , respectively. And the ND-TPA quantum detection efficiency of 1800 nm and 1550 nm was measured to be 7.9×10 -16 counts•pulse/photon 2 . This study provides a solution for the practical infrared photon detection devices based on TPA effect in Si-APDs.

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