Single-Photon Infrared Imaging with a Silicon Camera Based on Long-Wavelength-Pumping Two-Photon Absorption

Author(s):  
Jianan Fang ◽  
Yinqi Wang ◽  
E Wu ◽  
Ming Yan ◽  
Kun Huang ◽  
...  
2016 ◽  
Vol 858 ◽  
pp. 245-248 ◽  
Author(s):  
Hassan Hamad ◽  
Christophe Raynaud ◽  
Pascal Bevilacqua ◽  
Sigo Scharnholz ◽  
Bertrand Vergne ◽  
...  

Optical Beam Induced Current (OBIC) measurements are performed on 4H-SiC avalanche diodes with a very thin and a highly doped active region. A pulsed green laser, with a wavelength of 532 nm, illuminates a reverse biased diode leading to generate electron-hole pairs in the space charge region. Comparison between the 4H-SiC bandgap and the incident photon energy shows that single photon absorption process can be neglected and two-photon absorption process dominates in this case. Ionization rates are then extracted from multiplication curve in a high electric field range (3 to 5 MV.cm–1). Results are in good agreement with previous ones obtained on the same diodes using single photon absorption process.


2014 ◽  
Vol 92 (4) ◽  
pp. 284-288
Author(s):  
Seyyed Hossein Asadpour ◽  
H. Rahimpour Soleimani

In this paper, the effect of microwave field on the transient and steady state response of the four-level inverted Y-type atomic system is investigated. It is found that the properties of transient and steady processes can be affected by microwave field. It is found that the absorption spectrum behaves differentially for single-photon absorption and two-photon absorption. Also it is observed that in the one-photon absorption, the microwave field can lead to the probe gain and for two-photon absorption case, the strong microwave can enhance the absorption.


2008 ◽  
Vol 20 (16) ◽  
pp. 1426-1428 ◽  
Author(s):  
Wei-Hua Guo ◽  
John O'Dowd ◽  
Edward Flood ◽  
Tom Quinlan ◽  
Michael Lynch ◽  
...  

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