Effect of noble-metal contacts on doping and band gap of graphene

2010 ◽  
Vol 82 (12) ◽  
Author(s):  
A. Varykhalov ◽  
M. R. Scholz ◽  
Timur K. Kim ◽  
O. Rader
Keyword(s):  
Band Gap ◽  
2001 ◽  
Vol 707 ◽  
Author(s):  
Pantelis N. Trikalitis ◽  
Krishnaswamy K. Rangan ◽  
Mercouri G. Kanatzidis

ABSTRACT4-Mesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4- (Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<Eg<2.5 eV.


2021 ◽  
Author(s):  
Yanren Cao ◽  
Haiyan Li ◽  
Jingyi Jin ◽  
Yanxin Li ◽  
Ting Feng ◽  
...  

Fully utilising the visible light and lowering the economic costs are the toughest challenges of photocatalytic water splitting. To address these issues, a non-noble metal photocatalyst (CuIn)xZn2(1-x)S2 solid solution with...


2017 ◽  
Vol 2017 ◽  
pp. 1-13
Author(s):  
Mengyao Sun ◽  
Zhiyong Wang ◽  
Yayun Zhao ◽  
Junchao Jin ◽  
Jianrong Xiao ◽  
...  

A new 2D material, phosphorene, has several remarkable advantages; various superiorities make phosphorene a research hotspot. This paper provides comprehensive information about the structure and electronic and magnetic properties of phosphorene adsorbed with atoms, including alkali and alkaline-earth metal atoms, nonmetallic atoms, noble metal atoms, and transition-metal atoms. Phosphorene adsorbed with alkali and alkaline-earth metal atoms, such as Li and Na adatoms, becomes an n-type semiconductor, while phosphorene adsorbed with Be and Mg atoms becomes a p-type semiconductor. In view of nonmetallic adatoms (B, C, N, and O), the B adatom decorated phosphorene becomes metallic, the band gap of phosphorene adsorbed with C adatom decreases, and the phosphorene is p-type with N adatom, while the electronic property of O adatom adsorption case is affected slightly. Regarding noble metal adatoms adsorption condition, the Ag adatom makes phosphorene a n-type semiconductor, the Au adatom induces phosphorene to have a magnetism of 1 μB, and the electronic property of phosphorene is changed by adsorbing with Pt adatom. Among transition-metal adatoms, such as Fe, Ni, Co, Cu, and Zn adatoms, the band gap is reduced when Fe/Ni adatom adheres to the surface of phosphorene, The Co adsorbed phosphorene turns into a polar-gapless semiconductor and phosphorene is proved to be n-type with Cu adatom, but it is testified that the Zn atom is not suitable to adsorb on the phosphorene.


2005 ◽  
Vol 72 (4) ◽  
Author(s):  
Akihiro Fujii ◽  
Makusu Tsutsui ◽  
Shu Kurokawa ◽  
Akira Sakai
Keyword(s):  

2001 ◽  
Vol 703 ◽  
Author(s):  
Pantelis N. Trikalitis ◽  
Krishnaswamy K. Rangan ◽  
Mercouri G. Kanatzidis

ABSTRACTMesostructured semiconducting non-oxidic materials were prepared by linking [Ge4Q10]4-(Q=S, Se) clusters with the square planar noble metal cations of Pd2+ and Pt 2+ in the presence of cetylpyridinium surfactant molecules. The use of Pt2+ afforded materials with exceptionally high hexagonal pore order similar to those of high quality silica MCM-41. These materials are semiconductors with energy band gap in the range 1.8<Eg<2.5 eV.


1988 ◽  
Vol 52 (21) ◽  
pp. 1819-1821 ◽  
Author(s):  
J. W. Ekin ◽  
T. M. Larson ◽  
N. F. Bergren ◽  
A. J. Nelson ◽  
A. B. Swartzlander ◽  
...  

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