Spin-polarized positron annihilation measurements of polycrystalline Fe, Co, Ni, and Gd based on Doppler broadening of annihilation radiation

2011 ◽  
Vol 83 (10) ◽  
Author(s):  
Atsuo Kawasuso ◽  
Masaki Maekawa ◽  
Yuki Fukaya ◽  
Atsushi Yabuuchi ◽  
Izumi Mochizuki
Keyword(s):  
Positron Annihilation ◽  
Annihilation Radiation ◽  
Doppler Broadening ◽  
Spin Polarized

scholarly journals Calculation of the Doppler broadening of the electron-positron annihilation radiation in defect-free bulk materials

2000 ◽  
Vol 61 (15) ◽  
pp. 10092-10099 ◽  
Author(s):  
V. J. Ghosh ◽  
M. Alatalo ◽  
P. Asoka-Kumar ◽  
B. Nielsen ◽  
K. G. Lynn ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Annihilation Radiation ◽  
Doppler Broadening ◽  
Bulk Materials ◽  
Electron Positron Annihilation ◽  
Electron Positron

Doppler broadening measurements of the electron-positron annihilation radiation in nanocrystalline ZrO2

2005 ◽  
Vol 40 (19) ◽  
pp. 5265-5268 ◽  
Author(s):  
M. Chakrabarti ◽  
D. Bhowmick ◽  
A. Sarkar ◽  
S. Chattopadhyay ◽  
S. Dechoudhury ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Annihilation Radiation ◽  
Doppler Broadening ◽  
Electron Positron Annihilation ◽  
Electron Positron

Positron Annihilation in IR Transmitting GeS2-Ga2S3 Glasses

2015 ◽  
Vol 230 ◽  
pp. 221-227 ◽  
Author(s):  
Halyna Klym ◽  
A. Ingram ◽  
O. Shpotyuk ◽  
R. Szatanik ◽  
E. Petracovschi ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Free Volume ◽  
Decisive Role ◽  
Density Variation ◽  
Positron Annihilation Lifetime Spectroscopy ◽  
Annihilation Radiation ◽  
Doppler Broadening ◽  
Positron Annihilation Lifetime ◽  
Positron Trapping ◽  
Trapping Process

Positron annihilation lifetime spectroscopy combined with Doppler broadening of annihilation radiation was applied to study free-volume entities in GeS2-Ga2S3glasses affected by Ga additions. It is shown that Ga-related void sub-system plays a decisive role in positron trapping process, while the overall density variation is defined mainly by Ge-related sub-system. These results serve as basis for new characterization route for inner free-volume structure of these glasses.

scholarly journals Study of the Doppler broadening of positron annihilation radiation in silicon

2005 ◽  
Vol 35 (3b) ◽  
Author(s):  
E. do Nascimento ◽  
O. Helene ◽  
V. R. Vanin ◽  
M. Moralles
Keyword(s):  
Positron Annihilation ◽  
Annihilation Radiation ◽  
Doppler Broadening

Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy

2006 ◽  
Vol 527-529 ◽  
pp. 575-578 ◽  
Author(s):  
Reino Aavikko ◽  
Kimmo Saarinen ◽  
Björn Magnusson ◽  
Erik Janzén
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Positron Annihilation ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Annihilation Radiation ◽  
Doppler Broadening ◽  
Vacancy Clusters ◽  
Positron Spectroscopy

Positron annihilation radiation Doppler broadening spectroscopy was used to study defects in semi-insulating (SI) silicon carbide (SiC) substrates grown by high-temperature chemical vapour deposition (HTCVD). The Doppler broadening measurements show (i) that the measured samples contain vacancy clusters (ii) that the positron trapping to the clusters is increased in annealing (iii) that the chemical environment of the defects in the un-annealed samples is different from those of the annealed samples.

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