scholarly journals Fractional quantum Hall effect of two-dimensional electrons in high-mobility Si/SiGe field-effect transistors

2012 ◽  
Vol 85 (12) ◽  
Author(s):  
T. M. Lu ◽  
W. Pan ◽  
D. C. Tsui ◽  
C.-H. Lee ◽  
C. W. Liu
1992 ◽  
Vol 263 (1-3) ◽  
pp. 81-86 ◽  
Author(s):  
A.G. Davies ◽  
R. Newbury ◽  
M. Pepper ◽  
J.E.F. Frost ◽  
D.A. Ritchie ◽  
...  

1991 ◽  
Vol 44 (23) ◽  
pp. 13128-13131 ◽  
Author(s):  
A. G. Davies ◽  
R. Newbury ◽  
M. Pepper ◽  
J. E. F. Frost ◽  
D. A. Ritchie ◽  
...  

1996 ◽  
Vol 54 (8) ◽  
pp. R5259-R5262 ◽  
Author(s):  
A. R. Hamilton ◽  
M. Y. Simmons ◽  
F. M. Bolton ◽  
N. K. Patel ◽  
I. S. Millard ◽  
...  

1990 ◽  
Vol 04 (05) ◽  
pp. 301-310 ◽  
Author(s):  
D. C. TSUI

This paper gives a brief review of some recent experiments on the localization-delocalization transition in the integral quantum Hall effect and the new quantum liquid ground states giving rise to the fractional quantum Hall effect.


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