Effect of hole doping on the magnetism of point defects in graphene: A theoretical study

2014 ◽  
Vol 90 (24) ◽  
Author(s):  
Felix Yndurain
2008 ◽  
Vol 53 (9(4)) ◽  
pp. 2292-2298 ◽  
Author(s):  
Fei Pei ◽  
Song Wu ◽  
Gang Wang ◽  
Ming Xu ◽  
Song-You Wang ◽  
...  

2006 ◽  
Vol 16 (01) ◽  
pp. 389-396
Author(s):  
Masashi Nakatomi ◽  
Koichi Yamashita

We present a theoretical study on the point defects in ZrO 2–silicon interfaces using molecular dynamics (MD) calculations. A super-cell model that contains 9 atomic layers of silicon and 9 atomic layers of ZrO 2 was used for the simulation. Three atomic layers containing 17 oxygen atoms, eight silicon atoms, and nine Zr atoms were used to simulate the ZrO 2–silicon interface. We then performed density functional theory (DFT) with plane-wave basis to calculate the interface band structure. Results demonstrate that the stretched Zr – O bonds at the interface would produce some defect levels in the band gap. Particularly, the defect levels originated from the interstitial oxygen atoms are located close to the bottom of the ZrO 2 conduction band and hence it will affect the electrical properties of the gate dielectrics.


2014 ◽  
Vol 156 (1) ◽  
pp. 79-85 ◽  
Author(s):  
Teeraphat Watcharatharapong ◽  
Jiraroj T-Thienprasert ◽  
Sukit Limpijumnong

2008 ◽  
Vol 57 (5) ◽  
pp. 3120
Author(s):  
Ma Xin-Guo ◽  
Jiang Jian-Jun ◽  
Liang Pei

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