Orientational transition and complexation of DNA with anionic membranes: Weak and intermediate electrostatic coupling

The implementation of a barrier potential layer underneath the channel region, well known as Ground Plane (GP) implantation, and its influence on the performance of relaxed germanium pFinFET devices is investigated in this manuscript. This study aims to explain the fin width dependence of the threshold voltage from experimental data and evaluates the ground plane doping concentration and its depth influence on relaxed p-type channel germanium FinFET parameters, as threshold voltage, transconductance and subthreshold swing, through Technology Computer-Aided Design (TCAD) numerical simulations. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, considering the studied range of ground plane doping concentration. Concerning the subthreshold swing parameter, neither the GP doping concentration, nor its depth play a significant role since the electrostatic coupling is predominant.

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The contribution of electrostatic coupling to electrical migration in chronopotentiometry

Journal of Electroanalytical Chemistry (1959) ◽

10.1016/0022-0728(64)80032-2 ◽

1964 ◽

Vol 8 (1) ◽

pp. 1-4 ◽

Cited By ~ 5

Author(s):

Michael D. Morris

Keyword(s):

Electrostatic Coupling

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Herringbone Orientational Transition in Monolayer N 2 Adsorbed on Graphite by Density Functional Theory

EPL (Europhysics Letters) ◽

10.1209/0295-5075/24/1/003 ◽

1993 ◽

Vol 24 (1) ◽

pp. 13-19 ◽

Cited By ~ 5

Author(s):

S Sengupta ◽

O Opitz ◽

D Marx ◽

P Nielaba

Keyword(s):

Density Functional Theory ◽

Density Functional ◽

Functional Theory ◽

Orientational Transition

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Analysis of Omega-Gate Nanowire SOI MOSFET Under Analog Point of View

Journal of Integrated Circuits and Systems ◽

10.29292/jics.v15i1.113 ◽

2020 ◽

Vol 15 (1) ◽

pp. 1-6

Author(s):

Welder Fernandes Perina ◽

João Antonio Martino ◽

Paula Ghedini Der Agopian

Keyword(s):

Point Of View ◽

Short Channel Effects ◽

Theoretical Limit ◽

Short Channel ◽

Worst Case ◽

Channel Effects ◽

Electrostatic Coupling ◽

Channel Lengths ◽

P Type ◽

New Applications

This paper presents an evaluation of omega-gate nanowire n- and p-type SOI MOSFETs performance focusing on the main analog figures of merit. The different channel widths (WNW) and channel lengths (L) were also evaluated. These devices presented values of subthreshold slope near the theoretical limit at room temperature (60 mV/dec) and in the worst case a DIBL value smaller than 70 mV/V showing its immunity to short channel effects (SCEs) in the range studied. The narrowest device showed great electrostatic coupling, improving transconductance (gm), presenting an unit gain frequency over 200 GHz and intrinsic voltage gain over 80 dB. These values suggests that this device is capable of achieving good performance on new applications such as 5G communications and Internet-of-Things (IoT).

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Electroosmosis as a probe for electrostatic correlations

Soft Matter ◽

10.1039/d0sm01523g ◽

2020 ◽

Vol 16 (47) ◽

pp. 10688-10696

Author(s):

Ivan Palaia ◽

Igor M. Telles ◽

Alexandre P. dos Santos ◽

Emmanuel Trizac

Keyword(s):

Surface Charge ◽

Electroosmotic Flow ◽

Channel Surface ◽

Electrostatic Coupling

Ionic correlations affect electroosmosis in planar salt-free channels. Electroosmotic flow can then be used as a calibrated measurement of electrostatic coupling and channel surface charge.

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