scholarly journals Single-Shot Readout of a Nuclear Spin Weakly Coupled to a Nitrogen-Vacancy Center at Room Temperature

2017 ◽  
Vol 118 (15) ◽  
Author(s):  
Gang-Qin Liu ◽  
Jian Xing ◽  
Wen-Long Ma ◽  
Ping Wang ◽  
Chang-Hao Li ◽  
...  
Micromachines ◽  
2018 ◽  
Vol 9 (9) ◽  
pp. 437 ◽  
Author(s):  
David Hopper ◽  
Henry Shulevitz ◽  
Lee Bassett

The diamond nitrogen-vacancy (NV) center is a leading platform for quantum information science due to its optical addressability and room-temperature spin coherence. However, measurements of the NV center’s spin state typically require averaging over many cycles to overcome noise. Here, we review several approaches to improve the readout performance and highlight future avenues of research that could enable single-shot electron-spin readout at room temperature.


2015 ◽  
Vol 15 (15&16) ◽  
pp. 1397-1419
Author(s):  
Ming-Xing Luo ◽  
Hui-Ran Li

Teleportations of quantum gates are very important in the construction of quantum network and teleportation-based model of quantum computation. Assisted with nitrogenvacancy centers, we propose several schemes to teleport the quantum CNOT gate. Deterministic CNOT gate may be implemented on a remote two-photon system, remote two electron-spin system, hybrid photon-spin system or hybrid spin-photon system. Each photon only interacts with one spin each time. Moreover, quantum channel may be constructed by all combinations of the photon or electron-spin entanglement, or their hybrid entanglement. Since these electron-spin systems have experimentally shown a long coherence time even at the room temperature, our schemes provide useful ways for long-distance quantum applications.


2018 ◽  
Vol 924 ◽  
pp. 281-284 ◽  
Author(s):  
Yuta Abe ◽  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Shinobu Onoda ◽  
Moriyoshi Haruyama ◽  
...  

We investigated single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of confocal microscope techniques. We found SPSsonlyin 4H-SiC/SiO2interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not exhibit SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of the most famous SPSs, the nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and found that the formation of the SPSs strongly depended on the preparation of SiC/SiO2interfaces.


2020 ◽  
Vol 124 (22) ◽  
Author(s):  
Jun-Feng Wang ◽  
Fei-Fei Yan ◽  
Qiang Li ◽  
Zheng-Hao Liu ◽  
He Liu ◽  
...  

2018 ◽  
Vol 4 (8) ◽  
pp. eaat8978 ◽  
Author(s):  
Ilai Schwartz ◽  
Jochen Scheuer ◽  
Benedikt Tratzmiller ◽  
Samuel Müller ◽  
Qiong Chen ◽  
...  

2018 ◽  
Vol 97 (4) ◽  
Author(s):  
Yang-Yang Wang ◽  
Jing Qiu ◽  
Ying-Qi Chu ◽  
Mei Zhang ◽  
Jianming Cai ◽  
...  

2011 ◽  
Vol 84 (10) ◽  
Author(s):  
Abdelghani Laraoui ◽  
Jonathan S. Hodges ◽  
Colm A. Ryan ◽  
Carlos A. Meriles

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